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HY5V66ELFP-7 PDF预览

HY5V66ELFP-7

更新时间: 2024-11-07 15:34:23
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器内存集成电路
页数 文件大小 规格书
14页 174K
描述
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-54

HY5V66ELFP-7 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA54,9X9,32
针数:54Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.84访问模式:FOUR BANK PAGE BURST
最长访问时间:5.4 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):143 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:S-PBGA-B54
JESD-609代码:e1长度:8 mm
内存密度:67108864 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:4194304 words字数代码:4000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA54,9X9,32
封装形状:SQUARE封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.002 A
子类别:DRAMs最大压摆率:0.1 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:20宽度:8 mm
Base Number Matches:1

HY5V66ELFP-7 数据手册

 浏览型号HY5V66ELFP-7的Datasheet PDF文件第2页浏览型号HY5V66ELFP-7的Datasheet PDF文件第3页浏览型号HY5V66ELFP-7的Datasheet PDF文件第4页浏览型号HY5V66ELFP-7的Datasheet PDF文件第5页浏览型号HY5V66ELFP-7的Datasheet PDF文件第6页浏览型号HY5V66ELFP-7的Datasheet PDF文件第7页 
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O  
Document Title  
4Bank x 1M x 16bits Synchronous DRAM  
Revision History  
Revision No.  
History  
Draft Date  
Remark  
0.1  
Initial Draft  
Dec. 2004  
Preliminary  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev. 0.1 / Dec. 2004  
1

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HY5V66ELFP-HI HYNIX

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Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-54
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Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBG
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Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBG
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暂无描述
HY5V66FLFP-5 HYNIX

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Synchronous DRAM, 4MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEA
HY5V66FLFP-5I HYNIX

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Synchronous DRAM, 4MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEA
HY5V66FLFP-6 HYNIX

获取价格

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEA
HY5V66FLFP-6I HYNIX

获取价格

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEA