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HY57V56820LT-8 PDF预览

HY57V56820LT-8

更新时间: 2024-12-01 20:28:47
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器ISM频段光电二极管内存集成电路
页数 文件大小 规格书
13页 196K
描述
Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

HY57V56820LT-8 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP54,.46,32针数:54
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.84
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):125 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PDSO-G54
JESD-609代码:e6长度:22.22 mm
内存密度:268435456 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:8功能数量:1
端口数量:1端子数量:54
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32MX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP54,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:3.3 V认证状态:Not Qualified
刷新周期:8192座面最大高度:1.2 mm
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.002 A子类别:DRAMs
最大压摆率:0.26 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN BISMUTH
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

HY57V56820LT-8 数据手册

 浏览型号HY57V56820LT-8的Datasheet PDF文件第2页浏览型号HY57V56820LT-8的Datasheet PDF文件第3页浏览型号HY57V56820LT-8的Datasheet PDF文件第4页浏览型号HY57V56820LT-8的Datasheet PDF文件第5页浏览型号HY57V56820LT-8的Datasheet PDF文件第6页浏览型号HY57V56820LT-8的Datasheet PDF文件第7页 
HY57V56820(L)T  
4Banks x 8M x 8Bit Synchronous DRAM  
DESCRIPTION  
The HY57V56820T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications  
which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of 8,388,608x8.  
HY57V56820T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs  
are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high  
bandwidth. All input and output voltage levels are compatible with LVTTL.  
Programmable options include the length of pipeline ( CAS latency of 2 or 3), the number of consecutive read or write  
cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count  
sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate  
command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined  
design is not restricted by a `2N` rule.)  
FEATURES  
Single 3.3V ± 0.3V power supply  
Auto refresh and self refresh  
All device pins are compatible with LVTTL interface  
8192 refresh cycles / 64ms  
JEDEC standard 400mil 54pin TSOP-II with 0.8mm  
of pin pitch  
Programmable Burst Length and Burst Type  
- 1, 2, 4, 8 and Full Page for Sequential Burst  
- 1, 2, 4 and 8 for Interleave Burst  
Programmable CAS Latency ; 2, 3 Clocks  
All inputs and outputs referenced to positive edge of  
system clock  
Data mask function by DQM.  
Internal four banks operation  
ORDERING INFORMATION  
Part No.  
Clock Frequency  
Power  
Organization  
Interface  
Package  
HY57V56820T-HP  
HY57V56820T-H  
HY57V56820T-8  
HY57V56820T-P  
HY57V56820T-S  
HY57V56820LT-HP  
HY57V56820LT-H  
HY57V56820LT-8  
HY57V56820LT-P  
HY57V56820LT-S  
133MHz  
133MHz  
125MHz  
100MHz  
100MHz  
133MHz  
133MHz  
125MHz  
100MHz  
100MHz  
Normal  
4Banks x 4Mbits  
x16  
LVTTL  
400mil 54pin TSOP II  
Lower  
Power  
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume  
any responsibility for use of circuits described. No patent licenses are implied.  
Rev. 1.8/Nov. 01  

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