Datasheet > HY57V561620HT

HY57V561620HT

更新时间： 2024-11-01 23:57:11

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
13页	174K
描述
16Mx16\|3.3V\|8K\|75\|SDR SDRAM - 256M

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中文翻译

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HY57V561620HT 数据手册

HY57V561620H(L)T

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION

The HY57V561620HT is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require

large memory density and high bandwidth. HY57V561620HT is organized as 4banks of 4,194,304x16.

HY57V561620HT is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchro-

nized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output

voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by

a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or

write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or

write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)

FEATURES

•

Single 3.3±0.3V power supply

•

Auto refresh and self refresh

All device pins are compatible with LVTTL interface

8192 refresh cycles / 64ms

JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin

pitch

Programmable Burst Length and Burst Type

- 1, 2, 4, 8 or Full page for Sequential Burst

- 1, 2, 4 or 8 for Interleave Burst

•

All inputs and outputs referenced to positive edge of system

clock

•

Data mask function by UDQM, LDQM

Internal four banks operation

•

Programmable CAS Latency ; 2, 3 Clocks

ORDERING INFORMATION

Part No.

Clock Frequency

Power

Organization

Interface

Package

HY57V561620HT-6

HY57V561620HT-K

HY57V561620HT-H

HY57V561620HT-8

HY57V561620HT-P

HY57V561620HT-S

HY57V561620HLT-6

HY57V561620HLT-K

HY57V561620HLT-H

HY57V561620HLT-8

HY57V561620HLT-P

HY57V561620HLT-S

166MHz

133MHz

125MHz

100MHz

166MHz

133MHz

125MHz

100MHz

Normal

4Banks x 4Mbits x16

LVTTL

400mil 54pin TSOP II

Low power

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of

circuits described. No patent licenses are implied.

Rev. 1.3/Nov. 01

12 3 4 5 6 7...13

中文翻译

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与HY57V561620HT相关器件

型号	品牌	获取价格	描述	数据表
HY57V561620HT-6	HYNIX	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
HY57V561620HT-8	HYNIX	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
HY57V561620HT-H	HYNIX	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
HY57V561620HT-K	HYNIX	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
HY57V561620HT-P	ETC	获取价格	x16 SDRAM
HY57V561620HT-S	HYNIX	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
HY57V561620LT	ETC	获取价格	16Mx16\|3.3V\|8K\|75\|SDR SDRAM - 256M
HY57V561620LT-8	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620LT-H	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620LT-HI	ETC	获取价格	x16 SDRAM

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