Datasheet > HY57V561620LT-SI

HY57V561620LT-SI

更新时间： 2024-11-01 23:57:11

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
11页	64K
描述
x16 SDRAM

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中文翻译

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数据手册

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HY57V561620LT-SI 数据手册

HY57V561620T

4Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION

T h e H y n i x H Y 5 7 V 5 6 1 6 2 0 i s

2 6 8 , 4 3 5 , 4 5 6 b i t C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t h e M o b i l e a p p l i c a t i o n s

w h i c h r e q u i r e l o w p o w e r c o n s u m p t i o n a n d e x t e n d e d t e m p e r a t u r e r a n g e . H Y 5 7 V 5 6 1 6 2 0 i s o r g a n i z e d a s

4, 194, 304x16.

4 b a n k s o f

HY57V561620 is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs

are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high

bandwidth. All input and output voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline ( C A S latency of 2 or 3), the number of consecutive read or write

cycles initiated by

single control command (Burst length of 1,2,4,8 or full page), and the burst count

sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate

c o m m a n d o r c a n b e i n t e r r u p t e d a n d r e p l a c e d b y

design is not restricted by a `2N` rule.)

a n e w b u r s t r e a d o r w r i t e c o m m a n d o n a n y c y c l e . ( T h i s p i p e l i n e d

FEATURES

•

S i n g l e 3 . 3 V ± 0.3V power supply

•

Auto refresh and self refresh

All device pins are compatible with LVTTL interface

8 1 9 2 r e f r e s h c y c l e s / 6 4 m s

J E D E C s t a n d a r d 4 0 0 m i l 5 4 p i n T S O P - I I w i t h 0 . 8 m m

of pin pitch

P r o g r a m m a b l e B u r s t L e n g t h a n d B u r s t T y p e

- 1, 2, 4, 8 and Full Page for Sequential Burst

- 1, 2, 4 and 8 for Interleave Burst

P r o g r a m m a b l e C A S Latency ; 2, 3 Clocks

•

All inputs and outputs referenced to positive edge of

system clock

•

D a t a m a s k f u n c t i o n b y U D Q M a n d L D Q M

Internal four banks operation

•

ORDERING INFORMATION

Part No.

Clock Frequency

Power

Organization

Interface

Package

H Y 5 7 V 5 6 1 6 2 0 T - H I

H Y 5 7 V 5 6 1 6 2 0 T - S I

H Y 5 7 V 5 6 1 6 2 0 L T - H I

H Y 5 7 V 5 6 1 6 2 0 L T - S I

1 3 3 M H z

1 0 0 M H z

1 3 3 M H z

1 0 0 M H z

N o r m a l

P o w e r

4Banks x 4Mbits

x 1 6

L V T T L

400mil 54pin TSOP II

L o w P o w e r

This document is

a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Revision 0. 1/ Apr. 01

12 3 4 5 6 7...11

中文翻译

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与HY57V561620LT-SI相关器件

型号	品牌	获取价格	描述	数据表
HY57V561620T	ETC	获取价格	16Mx16\|3.3V\|8K\|75\|SDR SDRAM - 256M
HY57V561620T-10	ETC	获取价格	x16 SDRAM
HY57V561620T-8	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-H	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-HI	ETC	获取价格	x16 SDRAM
HY57V561620T-HP	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-I	ETC	获取价格	16Mx16\|3.3V\|8K\|75\|SDR SDRAM - 256M
HY57V561620T-P	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-S	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-SI	ETC	获取价格	x16 SDRAM

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