Datasheet > HY57V561620T-10

HY57V561620T-10

更新时间： 2024-11-01 23:57:11

品牌	Logo	应用领域
其他 - ETC		内存集成电路光电二极管动态存储器时钟
页数	文件大小	规格书
13页	181K
描述
x16 SDRAM

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HY57V561620T-10 数据手册

HY57V561620T

4Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION

The Hyundai HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory appli-

cations which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of

4,194,304x16.

HY57V561620 is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs

are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high

bandwidth. All input and output voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline ( CAS latency of 2 or 3), the number of consecutive read or write

cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count

sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate

command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined

design is not restricted by a `2N` rule.)

FEATURES

•

Single 3.3V ± 0.3V power supply

•

Auto refresh and self refresh

All device pins are compatible with LVTTL interface

8192 refresh cycles / 64ms

JEDEC standard 400mil 54pin TSOP-II with 0.8mm

of pin pitch

Programmable Burst Length and Burst Type

- 1, 2, 4, 8 and Full Page for Sequential Burst

- 1, 2, 4 and 8 for Interleave Burst

Programmable CAS Latency ; 2, 3 Clocks

•

All inputs and outputs referenced to positive edge of

system clock

•

Data mask function by UDQM and LDQM

Internal four banks operation

•

ORDERING INFORMATION

Part No.

Clock Frequency

Power

Organization

Interface

Package

HY57V561620T-H

HY57V561620T-8

HY57V561620T-S

HY57V561620T-10

133MHz

125MHz

100MHz

4Banks x 4Mbits

x16

Normal

LVTTL

400mil 54pin TSOP II

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Revision 1.5 / May.00

12 3 4 5 6 7...13

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与HY57V561620T-10相关器件

型号	品牌	获取价格	描述	数据表
HY57V561620T-8	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-H	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-HI	ETC	获取价格	x16 SDRAM
HY57V561620T-HP	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-I	ETC	获取价格	16Mx16\|3.3V\|8K\|75\|SDR SDRAM - 256M
HY57V561620T-P	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-S	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-SI	ETC	获取价格	x16 SDRAM
HY57V56420ALT-10	ETC	获取价格	x4 SDRAM
HY57V56420ALT-6	ETC	获取价格	x4 SDRAM