Datasheet > HY57V561620T

HY57V561620T

更新时间： 2024-11-05 23:57:11

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
13页	153K
描述
16Mx16\|3.3V\|8K\|75\|SDR SDRAM - 256M

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HY57V561620T 数据手册

HY57V561620(L)T

4Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications

which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.

The HY57V561620T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and

outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very

high bandwidth. All input and output voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline ( CAS latency of 2 or 3), the number of consecutive read or write

cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count

sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate

command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined

design is not restricted by a `2N` rule.)

FEATURES

•

Single 3.3V ± 0.3V power supply

•

Auto refresh and self refresh

All device pins are compatible with LVTTL interface

8192 refresh cycles / 64ms

JEDEC standard 400mil 54pin TSOP-II with 0.8mm

of pin pitch

Programmable Burst Length and Burst Type

- 1, 2, 4, 8 and Full Page for Sequential Burst

- 1, 2, 4 and 8 for Interleave Burst

Programmable CAS Latency ; 2, 3 Clocks

•

All inputs and outputs referenced to positive edge of

system clock

•

Data mask function by UDQM and LDQM

Internal four banks operation

•

ORDERING INFORMATION

Part No.

Clock Frequency

Power

Organization

Interface

Package

HY57V561620T-HP

HY57V561620T-H

HY57V561620T-8

HY57V561620T-P

HY57V561620T-S

HY57V561620LT-HP

HY57V561620LT-H

HY57V561620LT-8

HY57V561620LT-P

HY57V561620LT-S

133MHz

125MHz

100MHz

133MHz

125MHz

100MHz

Normal

4Banks x 4Mbits

x16

LVTTL

400mil 54pin TSOP II

Lower

Power

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Revision 1.8 / Apr.01

12 3 4 5 6 7...13

中文翻译

下载PDF

与HY57V561620T相关器件

型号	品牌	获取价格	描述	数据表
HY57V561620T-10	ETC	获取价格	x16 SDRAM
HY57V561620T-8	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-H	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-HI	ETC	获取价格	x16 SDRAM
HY57V561620T-HP	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-I	ETC	获取价格	16Mx16\|3.3V\|8K\|75\|SDR SDRAM - 256M
HY57V561620T-P	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-S	HYNIX	获取价格	4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620T-SI	ETC	获取价格	x16 SDRAM
HY57V56420ALT-10	ETC	获取价格	x4 SDRAM