生命周期: | Obsolete | 零件包装代码: | TSOP |
包装说明: | TSOP2-R, | 针数: | 20 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.84 |
访问模式: | FAST PAGE WITH EDO | 最长访问时间: | 60 ns |
其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | JESD-30 代码: | R-PDSO-G20 |
JESD-609代码: | e6 | 长度: | 17.14 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | EDO DRAM |
内存宽度: | 4 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 20 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 1MX4 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP2-R | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 认证状态: | Not Qualified |
刷新周期: | 1024 | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY514404BLT-50 | HYNIX |
获取价格 |
EDO DRAM, 1MX4, 50ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, TSOP2-26/20 |
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HY514404BR-50 | HYNIX |
获取价格 |
EDO DRAM, 1MX4, 50ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, REVERSE, TSOP2-26/20 |
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HY514404BR-60 | HYNIX |
获取价格 |
EDO DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, REVERSE, TSOP2-26/20 |
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HY514404BSLJ-50 | ETC |
获取价格 |
x4 EDO Page Mode DRAM |
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HY514404BSLJ-60 | HYNIX |
获取价格 |
EDO DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20 |
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HY514404BSLJ-70 | HYNIX |
获取价格 |
EDO DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20 |
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HY514404BSLR-50 | HYNIX |
获取价格 |
EDO DRAM, 1MX4, 50ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, REVERSE, TSOP2-26/20 |
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HY514404BSLR-60 | HYNIX |
获取价格 |
EDO DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, REVERSE, TSOP2-26/20 |
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HY514404BSLR-70 | HYNIX |
获取价格 |
EDO DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, REVERSE, TSOP2-26/20 |
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HY514404BSLT-50 | HYNIX |
获取价格 |
EDO DRAM, 1MX4, 50ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, TSOP2-26/20 |
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