Datasheet > HY4504B

HY4504B

更新时间： 2024-03-03 10:09:51

品牌	Logo	应用领域
华羿微 - HUAYI		/
页数	文件大小	规格书
11页	789K
描述
此器件为40V、2.3mΩ、TO-263-2L封装产品，采用Trench流片工艺，该器件适合锂电保护板等应用领域。

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中文翻译

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数据手册

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HY4504B 数据手册

HY4504P/B

N-Channel Enhancement Mode MOSFET

Features

Pin Description

•

40V/250A

_DS(ON)= 2.3 m(typ.) @ V_GS=10V

•

100% avalanche tested

Reliable and Rugged

Lead Free and GreenDevicesAvailable

(RoHS Compliant)

TO-220FB-3L

TO-263-2L

Applications

Switching Application

Power Management for DC/DC

N-Channel MOSFET

Ordering and Marking Information

Package Code

P : TO-220FB-3L

B: TO-263-2L

HY4504

Assembly Material

G : Lead Free Device

Date Code

YYXXX WW

YYXXXJWW G

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-

Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-

ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”

to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr

-oduct and/or to this document at any time without notice.

V1.0

www.hymexa.com

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