Datasheet > HY4903P

HY4903P

更新时间： 2024-01-15 09:53:29

品牌	Logo	应用领域
华羿微 - HUAYI		/
页数	文件大小	规格书
11页	702K
描述
N-Channel Enhancement Mode MOSFET

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HY4903P 数据手册

HY4903P/B

N-Channel Enhancement Mode MOSFET

Features

Pin Description

30V/290A

R_{DS(ON)=1.6mΩ(typ.) @VGS = 10Vꢀ}

100% avalanche tested

Excellent CdV/dt effect decline

/HDGꢀ)UHH Device Available

TO-220FB-3L

TO-263-2L

Applications

Switching Application

Power Management for DC/DC

N-Channel MOSFET

Ordering and Marking Information

Package Code

P : TO-220FB-3L

B: TO-263-2L

HY4903

Assembly Material

G : Lead Free Device

Date Code

YYXXX WW

YYXXXJWW G

Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate

Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-

Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed

900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to

this pr-oduct and/or to this document at any time without notice.

www.hymexa.com

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