Datasheet > HY4N60D

HY4N60D

更新时间： 2024-09-23 12:26:11

品牌	Logo	应用领域
虹扬 - HY		/
页数	文件大小	规格书
4页	166K
描述
600V / 4.0A N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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HY4N60D 数据手册

HY4N60D / HY4N60M

600V / 4.0A

600V, R_DS(ON)=2.4Ω@V_GS=10V, I_D=2.0A

N-Channel Enhancement Mode MOSFET

Features

• Low ON Resistance

• Fast Switching

• Low Gate Charge & Low C_RSS

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charger and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

G 2

Mechanical Information

TO-251

TO-252

• Case: TO-252 / ITO-251 Molded Plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

Drain

Marking & Ordering Information

TYPE

MARKING

4N60D

PACKAGE

TO-252

PACKING

2500PCS/REEL

80PCS/TUBE

Gate

HY4N60D

HY4N60M

Source

4N60M

TO-251

Absolute Maximum Ratings (T_C=25^OC unless otherwise noted )

Parameter

Symbol

V_DS

HY4N60D

HY4N60M

Units

Drain-Source Voltage

Gate-Source Voltage

600

+30

V_GS

T_C=25^OC

Continuous Drain Current

I_D

Pulsed Drain Current

I_{D M}

Maximum Power Dissipation

Derating Factor

56.8

0.46

P_D

0.39

Avalanche Energy with Single Pulse

E_AS

220

^OC

I_AS=4A, VDD=90V, L=27.5mΗ

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

Note : 1. Maximum DC current limited by the package

Thermal Characteristics

PARAMETER

Symbol HY4N60D

HY4N60M

2.6

Units

^OC/W

Junction-to-Case Thermal Resistance

Junction-to Ambient Thermal Resistance

2.2

θJC

θJA

110

^OC/W

COMPANYRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE

REV1.0 : AUG. 2011

PAGE . 1

12 3 4

中文翻译

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