HY4N65D / HY4N65M
650V / 4A
650V, RDS(ON)=2.8W@VGS=10V, ID=2A
N-Channel Enhancement Mode MOSFET
Features
• Low On-State Resistance
TO-252
TO-251
• Fast Switching
• Low Gate Charge & Low CRSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
2
1
G
D
3
1
G
2
D
S
3
S
Mechanical Information
• Case: TO-252 / TO-251 Molded Plastic
Drain
2
• Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
1
TYPE
MARKING
PACKAGE
PACKING
2500PCS/REEL
80PCS/TUBE
Gate
HY4N65D
HY4N65M
4N65D
TO-252
Source
3
4N65M
TO-251
Absolute Maximum Ratings (TC=25°C unless otherwise specified )
Parameter
Symbol
VDS
HY4N65D
HY4N65M
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
A
650
+30
VGS
ID
Continuous Drain Current
Pulsed Drain Current 1)
TC=25℃
TC=25℃
4
4
IDM
16
16
A
56.8
0.46
48
0.39
Maximum Power Dissipation
Derating Factor
PD
W
Avalanche Energy with Single Pulse
IAS=4A, VDD=150V, L=22.5mH
EAS
mJ
180
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
℃
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Symbol
HY4N65D
HY4N65M
2.6
Units
℃/W
RqJC
RqJA
2.2
50
110
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV 1.0, 20-Sept-2012
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