HY4N70T / HY4N70FT
700V / 4A
700V, RDS(ON)=2.8W@VGS=10V, ID=2A
N-Channel Enhancement Mode MOSFET
Features
• Low On-State Resistance
TO-220AB
ITO-220AB
• Fast Switching
• Low Gate Charge & Low CRSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
1
1
2
2
3
3
Mechanical Information
• Case: TO-220AB / ITO-220AB Molded Plastic
Drain
2
• Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
1
TYPE
MARKING
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
HY4N70T
HY4N70FT
4N70T
Source
3
4N70FT
Absolute Maximum Ratings (TC=25°C unless otherwise specified )
Parameter
Symbol
VDS
HY4N70T
HY4N70FT
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
A
700
+30
VGS
ID
Continuous Drain Current
Pulsed Drain Current 1)
TC=25℃
TC=25℃
4
4
IDM
16
16
A
71
0.57
26
0.21
Maximum Power Dissipation
Derating Factor
PD
W
Avalanche Energy with Single Pulse
IAS=4A, VDD=95V, L=28mH
EAS
mJ
224
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
℃
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Symbol
HY4N70T
HY4N70FT
4.8
Units
℃/W
RqJC
RqJA
1.76
50
110
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PAGE.1
REV 1.0, 24-Sept-2012