Datasheet > HY4N65T

HY4N65T

更新时间： 2024-02-22 10:36:47

品牌	Logo	应用领域
虹扬 - HY		/
页数	文件大小	规格书
4页	151K
描述
650V / 4A N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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HY4N65T 数据手册

HY4N65T / HY4N65FT

650V / 4A

650V, R_DS(ON)=2.8W@V_GS=10V, I_D=2A

N-Channel Enhancement Mode MOSFET

Features

• Low On-State Resistance

TO-220AB

ITO-220AB

• Fast Switching

• Low Gate Charge & Low C_RSS

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charger and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

Mechanical Information

• Case: TO-220AB / ITO-220AB Molded Plastic

Drain

• Terminals : Solderable per MIL-STD-750,Method 2026

Marking & Ordering Information

TYPE

MARKING

PACKAGE

TO-220AB

ITO-220AB

PACKING

50PCS/TUBE

Gate

HY4N65T

HY4N65FT

4N65T

Source

4N65FT

Absolute Maximum Ratings (T_C=25°C unless otherwise specified )

Parameter

Symbol

V_DS

HY4N65T

HY4N65FT

Units

Drain-Source Voltage

Gate-Source Voltage

650

+30

V_GS

I_D

Continuous Drain Current

Pulsed Drain Current ¹⁾

T_C=25℃

I_DM

0.57

0.21

Maximum Power Dissipation

Derating Factor

P_D

Avalanche Energy with Single Pulse

I_AS=4A, V_DD=150V, L=22.5mH

E_AS

180

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

℃

Note : 1. Maximum DC current limited by the package

Thermal Characteristics

Parameter

Junction-to-Case Thermal Resistance

Symbol

HY4N65T

HY4N65FT

4.8

Units

℃/W

R_qJC

R_qJA

1.76

110

℃/W

COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE

PAGE.1

REV 1.0, 20-Sept-2012

12 3 4

中文翻译

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