Datasheet > HY29F040C-12E

HY29F040C-12E

更新时间： 2024-11-06 09:29:51

品牌	Logo	应用领域
海力士 - HYNIX		/
页数	文件大小	规格书
40页	503K
描述
Flash, 512KX8, 120ns, PQCC32, PLASTIC, LCC-32

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HY29F040C-12E 数据手册

HY29F040 Series

512K x 8-bit CMOS, 5.0 Volt-only, Sector Erase Flash Memory

KEY FEATURES

•

Sector Protection

•

5.0 V ± 10% Read, Program, and Erase

- Minimizes system-level power requirements

High performance

- 90 ns access time

Low Power Consumption

- 20 mA typical active read current

- 30 mA typical program/erase current

Compatible with the JEDEC Standard for

Single-Voltage Flash Memories

- Uses software commands, pinouts, and

packages following the industry standards

for single power supply Flash memories

- Superior inadvertent write protection

Flexible Sector Architecture

- Any sector may be locked to prevent any

program or erase operation within that sector

Erase Suspend/Resume

- Suspends a sector erase operation to allow

data to be read from, or programmed into,

any sector not being erased

- The erase operation can then be resumed

Internal Erase Algorithm

- Automatically erases a sector, any combination

of sectors, or the entire chip

•

Internal Programming Algorithm

- Automatically programs and verifies data at a

specified address

•

- Eight equal size sectors of 64K bytes each

- Any combination of sectors can be erased

concurrently

•

Minimum 100,000 Program/Erase Cycles

PLCC, PDIP and TSOP Packages

- Supports full chip erase

DESCRIPTION

latch addresses and data needed for the pro-

gramming and erase operations.

The HY29F040 is a 4 Megabit, 5.0 volt-only, CMOS

Flash memory device organized as 524,288

(512 K) bytes of 8 bits each. The Flash memory

array is organized into eight uniform-sized sec-

tors of 64 Kbytes each. The device is offered

with access times of 90, 120 and 150 ns and is

provided in standard 32-pin PDIP, PLCC and

TSOP packages. It is designed to be pro-

grammed and erased in-system with a 5.0 volt

power-supply and can also be reprogrammed

in standard PROM programmers.

The HY29F040 is programmed by invoking the

program command sequence. This starts the

internal byte programming algorithm that auto-

matically times the program pulse width and

verifies the proper cell margin. An erase opera-

tion is performed likewise, by invoking the sec-

tor erase or chip erase command sequence.

This starts the internal erasing algorithm that

automatically preprograms the sector (if it is not

already programmed), times the erase pulse

width and verifies the proper cell margin. Sec-

tors of the HY29F040 Flash memory array are

electrically erased via Fowler-Nordheim tunnel-

ing. Bytes are programmed one byte at a time

using a hot electron injection mechanism.

The HY29F040 has separate chip enable (/CE),

write enable (/WE) and output enable (/OE) con-

trols. Hyundai Flash memory devices reliably

store memory data even after 100,000 program/

erase cycles.

The device is entirely pin and command set

compatible with the JEDEC standard for 4 Mega-

bit Flash memory devices. Commands are writ-

ten to an internal command register using stan-

dard microprocessor write timings. Register

contents serve as inputs to an internal state-

machine which controls the erase and pro-

gramming circuitry. Write cycles also internally

The HY29F040 features a flexible sector erase

architecture. The device memory array is divided

into eight sectors of 64K bytes each. The sec-

tors can be erased individually or in groups with-

out affecting the data in other sectors. The mul-

tiple sector erase and full chip erase capabili-

ties provide flexibility in altering the data in the

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of

circuits described. No patent licences are implied.

Rev.04: April 1998

Hyundai Semiconductor

12 3 4 5 6 7...40

中文翻译

下载PDF

与HY29F040C-12E相关器件

型号	品牌	获取价格	描述	数据表
HY29F040C-90E	HYNIX	获取价格	Flash, 512KX8, 90ns, PQCC32, PLASTIC, LCC-32
HY29F040C-90I	HYNIX	获取价格	Flash, 512KX8, 90ns, PQCC32, PLASTIC, LCC-32
HY29F040P-12	HYNIX	获取价格	Flash, 512KX8, 120ns, PDIP32, PLASTIC, DIP-32
HY29F040P-120	ETC	获取价格	x8 Flash EEPROM
HY29F040P-120C	HYNIX	获取价格	Flash, 512KX8, 120ns, PDIP32, PLASTIC, DIP-32
HY29F040P-120E	HYNIX	获取价格	Flash, 512KX8, 120ns, PDIP32, PLASTIC, DIP-32
HY29F040P-120I	HYNIX	获取价格	Flash, 512KX8, 120ns, PDIP32, PLASTIC, DIP-32
HY29F040P-12E	HYNIX	获取价格	Flash, 512KX8, 120ns, PDIP32, PLASTIC, DIP-32
HY29F040P-12I	HYNIX	获取价格	Flash, 512KX8, 120ns, PDIP32, PLASTIC, DIP-32
HY29F040P-15	HYNIX	获取价格	Flash, 512KX8, 150ns, PDIP32, PLASTIC, DIP-32

与HY29F040C-12E相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

10
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

HY29F040C-12E

HY29F040C-12E 数据手册

与HY29F040C-12E相关器件

与HY29F040C-12E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HY29F040C-12E

HY29F040C-12E 数据手册

与HY29F040C-12E相关器件

与HY29F040C-12E相关文章

您还可以找

您在本页遇到什么问题？