Datasheet > HY29F040P-15I

HY29F040P-15I

更新时间： 2024-09-16 20:40:11

品牌	Logo	应用领域
海力士 - HYNIX		光电二极管内存集成电路
页数	文件大小	规格书
40页	503K
描述
Flash, 512KX8, 150ns, PDIP32, PLASTIC, DIP-32

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技术参数
数据手册

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HY29F040P-15I 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DIP	包装说明：	PLASTIC, DIP-32
针数：	32	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.91	Is Samacsys：	N
最长访问时间：	150 ns	其他特性：	MINIMUM 100000 PROGRAM/ERASE CYCLES
命令用户界面：	YES	数据轮询：	YES
耐久性：	100000 Write/Erase Cycles	JESD-30 代码：	R-PDIP-T32
JESD-609代码：	e0	长度：	42.164 mm
内存密度：	4194304 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
部门数/规模：	8	端子数量：	32
字数：	524288 words	字数代码：	512000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	512KX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装等效代码：	DIP32,.6
封装形状：	RECTANGULAR	封装形式：	IN-LINE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	编程电压：	5 V
认证状态：	Not Qualified	座面最大高度：	5.715 mm
部门规模：	64K	最大待机电流：	0.001 A
子类别：	Flash Memories	最大压摆率：	0.06 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	NO
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	切换位：	YES
类型：	NOR TYPE	宽度：	15.24 mm
Base Number Matches：	1

HY29F040P-15I 数据手册

HY29F040 Series

512K x 8-bit CMOS, 5.0 Volt-only, Sector Erase Flash Memory

KEY FEATURES

•

Sector Protection

•

5.0 V ± 10% Read, Program, and Erase

- Minimizes system-level power requirements

High performance

- 90 ns access time

Low Power Consumption

- 20 mA typical active read current

- 30 mA typical program/erase current

Compatible with the JEDEC Standard for

Single-Voltage Flash Memories

- Uses software commands, pinouts, and

packages following the industry standards

for single power supply Flash memories

- Superior inadvertent write protection

Flexible Sector Architecture

- Any sector may be locked to prevent any

program or erase operation within that sector

Erase Suspend/Resume

- Suspends a sector erase operation to allow

data to be read from, or programmed into,

any sector not being erased

- The erase operation can then be resumed

Internal Erase Algorithm

- Automatically erases a sector, any combination

of sectors, or the entire chip

•

Internal Programming Algorithm

- Automatically programs and verifies data at a

specified address

•

- Eight equal size sectors of 64K bytes each

- Any combination of sectors can be erased

concurrently

•

Minimum 100,000 Program/Erase Cycles

PLCC, PDIP and TSOP Packages

- Supports full chip erase

DESCRIPTION

latch addresses and data needed for the pro-

gramming and erase operations.

The HY29F040 is a 4 Megabit, 5.0 volt-only, CMOS

Flash memory device organized as 524,288

(512 K) bytes of 8 bits each. The Flash memory

array is organized into eight uniform-sized sec-

tors of 64 Kbytes each. The device is offered

with access times of 90, 120 and 150 ns and is

provided in standard 32-pin PDIP, PLCC and

TSOP packages. It is designed to be pro-

grammed and erased in-system with a 5.0 volt

power-supply and can also be reprogrammed

in standard PROM programmers.

The HY29F040 is programmed by invoking the

program command sequence. This starts the

internal byte programming algorithm that auto-

matically times the program pulse width and

verifies the proper cell margin. An erase opera-

tion is performed likewise, by invoking the sec-

tor erase or chip erase command sequence.

This starts the internal erasing algorithm that

automatically preprograms the sector (if it is not

already programmed), times the erase pulse

width and verifies the proper cell margin. Sec-

tors of the HY29F040 Flash memory array are

electrically erased via Fowler-Nordheim tunnel-

ing. Bytes are programmed one byte at a time

using a hot electron injection mechanism.

The HY29F040 has separate chip enable (/CE),

write enable (/WE) and output enable (/OE) con-

trols. Hyundai Flash memory devices reliably

store memory data even after 100,000 program/

erase cycles.

The device is entirely pin and command set

compatible with the JEDEC standard for 4 Mega-

bit Flash memory devices. Commands are writ-

ten to an internal command register using stan-

dard microprocessor write timings. Register

contents serve as inputs to an internal state-

machine which controls the erase and pro-

gramming circuitry. Write cycles also internally

The HY29F040 features a flexible sector erase

architecture. The device memory array is divided

into eight sectors of 64K bytes each. The sec-

tors can be erased individually or in groups with-

out affecting the data in other sectors. The mul-

tiple sector erase and full chip erase capabili-

ties provide flexibility in altering the data in the

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of

circuits described. No patent licences are implied.

Rev.04: April 1998

Hyundai Semiconductor

12 3 4 5 6 7...40

中文翻译

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与HY29F040P-15I相关器件

型号	品牌	获取价格	描述	数据表
HY29F040P-70	ETC	获取价格	x8 Flash EEPROM
HY29F040P-90	HYNIX	获取价格	Flash, 512KX8, 90ns, PDIP32, PLASTIC, DIP-32
HY29F040P-90C	HYNIX	获取价格	Flash, 512KX8, 90ns, PDIP32, PLASTIC, DIP-32
HY29F040P-90E	HYNIX	获取价格	Flash, 512KX8, 90ns, PDIP32, PLASTIC, DIP-32
HY29F040P-90I	HYNIX	获取价格	Flash, 512KX8, 90ns, PDIP32, PLASTIC, DIP-32
HY29F040R-12	HYNIX	获取价格	Flash, 512KX8, 120ns, PDSO32, REVERSE, TSOP-32
HY29F040R-12E	ETC	获取价格	x8 Flash EEPROM
HY29F040R-12I	HYNIX	获取价格	Flash, 512KX8, 120ns, PDSO32, REVERSE, TSOP-32
HY29F040R-15	ETC	获取价格	x8 Flash EEPROM
HY29F040R-15E	HYNIX	获取价格	Flash, 512KX8, 150ns, PDSO32, REVERSE, TSOP-32

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