是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, WSOP1-48 | 针数: | 48 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.84 |
最长访问时间: | 12000 ns | JESD-30 代码: | R-PDSO-G48 |
长度: | 15.4 mm | 内存密度: | 1073741824 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 67108864 words | 字数代码: | 64000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 64MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VSSOP |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
编程电压: | 1.8 V | 认证状态: | Not Qualified |
座面最大高度: | 0.7 mm | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 20 | 类型: | NAND TYPE |
宽度: | 12 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY27SA161G1M-VPIP | HYNIX |
获取价格 |
Flash, 64MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, WSOP1-48 | |
HY27SA161G1M-VPIS | HYNIX |
获取价格 |
Flash, 64MX16, 12000ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, WSOP1-48 | |
HY27SA1G1M | HYNIX |
获取价格 |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory | |
HY27SAXXX | HYNIX |
获取价格 |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory | |
HY27SF081G2A | HYNIX |
获取价格 |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash | |
HY27SF081G2A-FIP | HYNIX |
获取价格 |
Flash, 128MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, FPBGA-63 | |
HY27SF081G2A-FIS | HYNIX |
获取价格 |
Flash, 128MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, FPBGA-63 | |
HY27SF081G2A-FPCB | HYNIX |
获取价格 |
Flash, 128MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FPBGA-63 | |
HY27SF081G2A-FPCS | HYNIX |
获取价格 |
Flash, 128MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FPBGA-63 | |
HY27SF081G2A-FPIB | HYNIX |
获取价格 |
Flash, 128MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FPBGA-63 |