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HY27SF081G2M-SEP PDF预览

HY27SF081G2M-SEP

更新时间: 2024-09-15 13:08:27
品牌 Logo 应用领域
海力士 - HYNIX 闪存
页数 文件大小 规格书
46页 391K
描述
Flash, 128MX8, 30ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48

HY27SF081G2M-SEP 技术参数

是否无铅:不含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:VSSOP, TSSOP48,.71,20针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.91
Is Samacsys:N最长访问时间:30 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:15.4 mm内存密度:1073741824 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1K
端子数量:48字数:134217728 words
字数代码:128000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:128MX8封装主体材料:PLASTIC/EPOXY
封装代码:VSSOP封装等效代码:TSSOP48,.71,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
页面大小:2K words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8 V
编程电压:1.8 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:0.65 mm
部门规模:128K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.015 mA
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NAND TYPE宽度:12 mm
Base Number Matches:1

HY27SF081G2M-SEP 数据手册

 浏览型号HY27SF081G2M-SEP的Datasheet PDF文件第2页浏览型号HY27SF081G2M-SEP的Datasheet PDF文件第3页浏览型号HY27SF081G2M-SEP的Datasheet PDF文件第4页浏览型号HY27SF081G2M-SEP的Datasheet PDF文件第5页浏览型号HY27SF081G2M-SEP的Datasheet PDF文件第6页浏览型号HY27SF081G2M-SEP的Datasheet PDF文件第7页 
HY27SF(08/16)1G2A Series  
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash  
1Gb NAND FLASH  
HY27SF081G2A  
HY27SF161G2A  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev 0.3 / Nov. 2006  
1

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