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HXS20-NP PDF预览

HXS20-NP

更新时间： 2024-09-23 03:43:15
品牌 Logo 应用领域
莱姆 - LEM 传感器
页数 文件大小 规格书
3页 293K
描述
Current Transducer

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中文翻译

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HXS20-NP 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, PACKAGE-12Reach Compliance Code：compliant
HTS代码：8542.39.00.01风险等级：5.54
模拟集成电路 - 其他类型：ANALOG CIRCUITJESD-30 代码：R-PXSS-X12
功能数量：1端子数量：12
最高工作温度：105 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SPECIAL SHAPE峰值回流温度（摄氏度）：NOT SPECIFIED
最大供电电压 (Vsup)：5.25 V最小供电电压 (Vsup)：4.75 V
标称供电电压 (Vsup)：5 V表面贴装：NO
温度等级：INDUSTRIAL端子形式：UNSPECIFIED
端子位置：UNSPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

HXS20-NP 数据手册

 浏览型号HXS20-NP的Datasheet PDF文件第2页浏览型号HXS20-NP的Datasheet PDF文件第3页 
Current Transducer HXS 20-NP  
IPN = 5 - 10 - 20 A  
For the electronic measurement of currents : DC, AC, pulsed, mixed,  
with a galvanic isolation between the primary circuit (high power)  
and the secondary circuit (electronic circuit).  
All Data are given with a RL = 10 kW  
Electrical data  
Features  
IPN  
IP  
VOUT  
Primary nominal rms current  
Primary current measuring range  
Output voltage (Analog) @ IP  
IP = 0  
± 20  
± 60  
A
A
· Hall effect measuring principle  
· Multirange current transducer  
through PCB pattern lay-out  
· Galvanic isolation between primary  
and secondary circuit  
· Isolation test voltage 3500V  
· Low power consumption  
· Extremely low profile, < 11mm  
· Single power supply +5V  
· Fixed offset & gain  
VREF ±(0.625·IP/IPN) V  
VREF ± 0.0125  
2.5 ± 0.025  
V
V
W
kW  
kW  
W
µF  
V
VREF  
Reference voltage 1) - Output voltage  
VREF Output impedance  
VREF Load impedance  
Load resistance  
Output internal resistance  
Capacitive loading  
typ. 200  
³ 200  
³ 2  
< 10  
< 1  
5
RL  
ROUT  
CL  
VC  
Supply voltage (± 5 %)  
Current consumption @ VC = 5 V  
IC  
22  
mA  
· Insulated plastic case recognized  
according to UL 94-V0.  
Accuracy - Dynamic performance data  
X
e
Accuracy 2) @ IPN , TA = 25°C  
Linearity error 0.. IPN  
.. 3 x IPN  
£ ± 1  
£ ± 0.5  
£ ± 1  
£ ± 0.4  
£ ± 0.01  
£ ± 0.2  
% of IPN  
% of IPN  
% of IPN  
mV/K  
%/K  
mV/K  
Advantages  
L
· Small size and space saving  
· Only one design for wide current  
ratings range  
TCVOUT Temperature coefficient of VOUT @ IP = 0  
TCVREF Temperature coefficient of VREF  
TCVOUT /VREF Temperature coefficient of VOUT / VREF @ IP = 0  
· High immunity to external  
interference.  
· Internal & external reference  
TCG  
VOM  
Temperature coefficient of G  
Magnetic offset voltage@ IP = 0,  
after an overload of 3 x IPN  
Reaction time @ 10 % of IPN  
Response time @ 90 % of IPN  
£ ± 0.05%ofreading/K  
< ± 0.7  
< 3  
% of IPN  
µs  
tra  
tr  
< 5  
µs  
Applications  
di/dt di/dt accurately followed  
VNO  
> 50  
< 20  
< 40  
DC .. 50  
A/µs  
mVpp  
mVpp  
kHz  
· AC variable speed drives  
· Static converters for DC motor drives  
· Battery supplied applications  
· Uninterruptible Power Supplies  
(UPS)  
· Switched Mode Power Supplies  
(SMPS)  
· Power supplies for welding  
applications.  
Output noise voltage (DC ..10 kHz)  
(DC .. 1 MHz)  
Frequency bandwidth (-3 dB) 3)  
f
General data  
TA  
TS  
m
Ambient operating temperature  
Ambient storage temperature  
Mass  
- 40 .. + 85  
- 40 .. + 85  
10  
°C  
°C  
g
Standards  
EN 50178 (97-10-01)  
ApplicationDomain  
Notes : 1) It is possible to overdrive VREF with an external reference voltage  
between 2 - 2.8 V providing its ability to sink or source approximately  
2.5 mA.  
· Industrial  
2) Excluding offset and hysteresis.  
3) Small signal only to avoid excessive heatings of the magnetic core.  
Page 1/3  
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.  
061004/11  
www.lem.com  
123

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