Aerospace Electronics
FIFO—SOI
HX6409
HX6218
HX6136
FEATURES
• 1K x 36, 2K x 18, 4K x 9 Organizations
OTHER
• Fabricated with RICMOS™ IV Silicon on Insulator
• Read/Write Cycle Times
(SOI) 0.8 µm Process (Leff = 0.65µm)
<35 ns (-55° to 125°C)
• Expandable in Width
RADIATION
• Supports Free-Running 50% Duty Cycle Clock
• Empty, Full, Half Full, 1/4 Full, 3/4 Full, Error Flags
• Parity Generation/Checking
• Total Dose Hardness through 1x106 rad(SiO2)
• Neutron Hardness through 1x1014 cm-2
• Dynamic and Static Transient Upset Hardness
through 1x109 rad(Si)/s
• Fully Asynchronous with Simultaneous
Read and Write Operation
• Dose Rate Survivability through 1x1011 rad(Si)/s
• Soft Error Rate of <1x10-10 upsets/bit-day
• No Latchup
• Output Enable (OE)
• CMOS or TTL Compatible I/O
• Single 5 V ± 10% Power Supply
• Various Flat Pack Options
GENERAL DESCRIPTION
The HX6409, HX6218, and HX6136 are high speed, low-
power, first-in first-out memories with clocked read and
write interfaces. The HX6409 is a 4096 word by 9 bit
memory array, the HX6218 is a 2048 word by 18 bit
memory array, and the HX6136 is a 1024 word by 36 bit
memory array. The FIFOs support width expansion while
depthexpansionrequiresexternallogiccontrolusingstate
machinetechniques.Featuresincludeprogrammablepar-
ity control, an empty/full flag, a quarter/three quarter full
flag, a half full flag and an error flag.
The output port is controlled in a similar manner by a free-
running read clock (CKR) and a read enable pin (
). In
ENR
addition, the three FIFOs have an output enable pin (
and a master reset pin (
MR
)
OE
). The read (CKR) and write
(CKW) clocks may be tied together for single-clock
operation or the two clocks may be run independently for
asynchronous read/write applications. Clock frequencies
up to 30 MHz are achievable in the three configurations.
Honeywell’s enhanced SOI RICMOS™ IV (Radiation In-
sensitive CMOS) technology is radiation hardened through
the use of advanced and proprietary design, layout and
process hardening techniques. The FIFO is fabricated with
Honeywell’s radiation hardened technology, and is de-
signed for use in systems operating in radiation environ-
ments. The SOI RICMOS™ IV process is a 5-volt, SIMOX
CMOS technology with a 150 Å gate oxide and a minimum
drawn feature size of 0.8 µm, (0.65 µm effective gate
array—Leff). Additional features include tungsten via plugs,
Honeywell’s proprietary SHARP planarization process,
andalightlydopeddrain(LDD)structureforimprovedshort
channel reliability.
These FIFOs provide solutions for a wide variety of data
buffering needs, including high-speed data acquisition,
multiprocessor interfaces, and communications buffer-
ing. These FIFOs have separate input and output ports
that are controlled by separate clock and enable sig-
nals. The input port is controlled by a free running clock
(CKW) and a write enable pin
. When
is
ENW
ENW
asserted, data is written into the FIFO on the rising edge
of the CKW signal. While is held active, data is
ENW
continually written into the FIFO on each CKW cycle.
Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.ssec.honeywell.com