Datasheet > HX6218DBHC

HX6218DBHC

更新时间： 2024-01-16 06:39:34

品牌	Logo	应用领域
其他 - ETC		先进先出芯片
页数	文件大小	规格书
16页	159K
描述
x18 Synchronous FIFO

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HX6218DBHC 技术参数

生命周期：	Obsolete	包装说明：	GQFF,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.71	风险等级：	5.68
最长访问时间：	30 ns	周期时间：	34 ns
JESD-30 代码：	S-CQFP-F132	长度：	24.13 mm
内存密度：	36864 bit	内存宽度：	18
功能数量：	1	端子数量：	132
字数：	2048 words	字数代码：	2000
工作模式：	SYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-55 °C	组织：	2KX18
可输出：	YES	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装代码：	GQFF	封装形状：	SQUARE
封装形式：	FLATPACK, GUARD RING	并行/串行：	PARALLEL
认证状态：	Not Qualified	座面最大高度：	2.7686 mm
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子形式：	FLAT	端子节距：	0.635 mm
端子位置：	QUAD	宽度：	24.13 mm
Base Number Matches：	1

HX6218DBHC 数据手册

Aerospace Electronics

FIFO—SOI

HX6409

HX6218

HX6136

FEATURES

• 1K x 36, 2K x 18, 4K x 9 Organizations

OTHER

• Fabricated with RICMOS^™IV Silicon on Insulator

• Read/Write Cycle Times

(SOI) 0.8 µm Process (L_eff= 0.65µm)

<35 ns (-55° to 125°C)

• Expandable in Width

RADIATION

• Supports Free-Running 50% Duty Cycle Clock

• Empty, Full, Half Full, 1/4 Full, 3/4 Full, Error Flags

• Parity Generation/Checking

• Total Dose Hardness through 1x10⁶rad(SiO₂)

• Neutron Hardness through 1x10¹⁴cm^-2

• Dynamic and Static Transient Upset Hardness

through 1x10⁹rad(Si)/s

• Fully Asynchronous with Simultaneous

Read and Write Operation

• Dose Rate Survivability through 1x10¹¹rad(Si)/s

• Soft Error Rate of <1x10^-10upsets/bit-day

• No Latchup

• Output Enable (OE)

• CMOS or TTL Compatible I/O

• Single 5 V ± 10% Power Supply

• Various Flat Pack Options

GENERAL DESCRIPTION

The HX6409, HX6218, and HX6136 are high speed, low-

power, first-in first-out memories with clocked read and

write interfaces. The HX6409 is a 4096 word by 9 bit

memory array, the HX6218 is a 2048 word by 18 bit

memory array, and the HX6136 is a 1024 word by 36 bit

memory array. The FIFOs support width expansion while

depthexpansionrequiresexternallogiccontrolusingstate

machinetechniques.Featuresincludeprogrammablepar-

ity control, an empty/full flag, a quarter/three quarter full

flag, a half full flag and an error flag.

The output port is controlled in a similar manner by a free-

running read clock (CKR) and a read enable pin (

). In

ENR

addition, the three FIFOs have an output enable pin (

and a master reset pin (

)

). The read (CKR) and write

(CKW) clocks may be tied together for single-clock

operation or the two clocks may be run independently for

asynchronous read/write applications. Clock frequencies

up to 30 MHz are achievable in the three configurations.

Honeywell’s enhanced SOI RICMOS™ IV (Radiation In-

sensitive CMOS) technology is radiation hardened through

the use of advanced and proprietary design, layout and

process hardening techniques. The FIFO is fabricated with

Honeywell’s radiation hardened technology, and is de-

signed for use in systems operating in radiation environ-

ments. The SOI RICMOS™ IV process is a 5-volt, SIMOX

CMOS technology with a 150 Å gate oxide and a minimum

drawn feature size of 0.8 µm, (0.65 µm effective gate

array—L_eff). Additional features include tungsten via plugs,

Honeywell’s proprietary SHARP planarization process,

andalightlydopeddrain(LDD)structureforimprovedshort

channel reliability.

These FIFOs provide solutions for a wide variety of data

buffering needs, including high-speed data acquisition,

multiprocessor interfaces, and communications buffer-

ing. These FIFOs have separate input and output ports

that are controlled by separate clock and enable sig-

nals. The input port is controlled by a free running clock

(CKW) and a write enable pin

. When

ENW

asserted, data is written into the FIFO on the rising edge

of the CKW signal. While is held active, data is

ENW

continually written into the FIFO on each CKW cycle.

Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.ssec.honeywell.com

12 3 4 5 6 7...16

中文翻译

下载PDF

与HX6218DBHC相关器件

型号	品牌	获取价格	描述	数据表
HX6218DBHT	HONEYWELL	获取价格	FIFO, 2KX18, 30ns, Synchronous, CMOS, CQFP68, CERAMIC, QFP-68
HX6218DBNC	HONEYWELL	获取价格	FIFO, 2KX18, 30ns, Synchronous, CMOS, CQFP68, CERAMIC, QFP-68
HX6218DBNT	HONEYWELL	获取价格	FIFO, 2KX18, 30ns, Synchronous, CMOS, CQFP68, CERAMIC, QFP-68
HX6218DBRC	HONEYWELL	获取价格	FIFO, 2KX18, 30ns, Synchronous, CMOS, CQFP68, CERAMIC, QFP-68
HX6218DBRT	HONEYWELL	获取价格	FIFO, 2KX18, 30ns, Synchronous, CMOS, CQFP68, CERAMIC, QFP-68
HX6218DEFC	HONEYWELL	获取价格	FIFO, 2KX18, Synchronous, CMOS, CQFP68, CERAMIC, QFP-68
HX6218DEFT	HONEYWELL	获取价格	FIFO, 2KX18, Synchronous, CMOS, CQFP68, CERAMIC, QFP-68
HX6218DEHC	HONEYWELL	获取价格	FIFO, 2KX18, Synchronous, CMOS, CQFP68, CERAMIC, QFP-68
HX6218DEHT	HONEYWELL	获取价格	FIFO, 2KX18, Synchronous, CMOS, CQFP68, CERAMIC, QFP-68
HX6218DENC	ETC	获取价格	x18 Synchronous FIFO

与HX6218DBHC相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

2
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

2
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

2
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

2

产品中心

服务支持

精选活动

关于我们

帮助中心

HX6218DBHC

HX6218DBHC 技术参数

HX6218DBHC 数据手册

与HX6218DBHC相关器件

与HX6218DBHC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HX6218DBHC

HX6218DBHC 技术参数

HX6218DBHC 数据手册

与HX6218DBHC相关器件

与HX6218DBHC相关文章

您还可以找

您在本页遇到什么问题？