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HX6218DSRC PDF预览

HX6218DSRC

更新时间: 2024-12-01 20:35:23
品牌 Logo 应用领域
霍尼韦尔 - HONEYWELL 时钟先进先出芯片内存集成电路
页数 文件大小 规格书
16页 879K
描述
FIFO, 2KX18, 30ns, Synchronous, CMOS, CQFP68, CERAMIC, QFP-68

HX6218DSRC 技术参数

生命周期:Active零件包装代码:QFP
包装说明:QFF, QFP68,.99SQ,50针数:68
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.1
Is Samacsys:N最长访问时间:30 ns
最大时钟频率 (fCLK):29.4 MHz周期时间:36 ns
JESD-30 代码:S-CQFP-F68长度:24.13 mm
内存密度:36864 bit内存集成电路类型:OTHER FIFO
内存宽度:18功能数量:1
端子数量:68字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:2KX18可输出:YES
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:QFF
封装等效代码:QFP68,.99SQ,50封装形状:SQUARE
封装形式:FLATPACK并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883 Class S座面最大高度:2.5908 mm
最大待机电流:0.0005 A子类别:FIFOs
最大压摆率:0.5 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:1.27 mm端子位置:QUAD
总剂量:100k Rad(Si) V宽度:24.13 mm
Base Number Matches:1

HX6218DSRC 数据手册

 浏览型号HX6218DSRC的Datasheet PDF文件第2页浏览型号HX6218DSRC的Datasheet PDF文件第3页浏览型号HX6218DSRC的Datasheet PDF文件第4页浏览型号HX6218DSRC的Datasheet PDF文件第5页浏览型号HX6218DSRC的Datasheet PDF文件第6页浏览型号HX6218DSRC的Datasheet PDF文件第7页 
First-In First-Out Memory  
HX6409/HX6218/HX6136  
The HX6409, HX6218, and HX6136 are high speed,  
low power, first-in first-out memories with clocked read  
and write interfaces. The HX6409 is a 4096-word by 9-  
bit memory array; the HX6218 is a 2048-word by 18-bit  
memory array; and the HX6136 is a 1024-word by 36-  
bit memory array. The FIFOs support width expansion  
while depth expansion requires external logic control  
using state machine techniques. Features include  
programmable parity control, an empty/full flag, a  
quarter/three quarter full flag, a half full flag and an  
error flag.  
together for single-clock operation or the two clocks  
may be run independently for asynchronous read/write  
applications. Clock frequencies up to 28 MHz are  
achievable in the three configurations.  
Honeywell’s FIFOs provide solutions for a wide variety  
of data buffering needs, including high-speed data  
acquisition,  
multiprocessor  
interfaces,  
and  
communications buffering.  
Honeywell’s enhanced SOI RICMOS™ IV (Radiation  
Insensitive CMOS) technology is radiation hardened  
through the use of advanced and proprietary design,  
layout and process hardening techniques. The FIFO is  
Input ports are controlled by a free running clock (CKW)  
and a write-enable pin ENW . When ENW is  
asserted, data is written into the FIFO on the rising  
edge of the CKW signal. While ENW is held active,  
data is continually written into the FIFO on each CKW  
cycle.  
fabricated  
with  
Honeywell’s  
radiation-hardened  
technology, and is designed for use in systems  
operating in radiation environments. The SOI  
RICMOS™ IV process is a 5-volt, SOI CMOS  
technology with a 150 Å gate oxide and a minimum  
drawn feature size of 0.8µm, (0.65µm effective gate  
length—Leff). Additional features include tungsten via  
plugs, Honeywell’s proprietary SHARP planarization  
process, and a lightly doped drain (LDD) structure.  
The output port is controlled in a similar manner by a  
free running read clock (CKR) and a read enable pin  
( ENR ). In addition, the three FIFOs have an output  
enable pin ( OE ) and a master reset pin ( MR ). The  
read (CKR) and write ( CKW ) clocks may be tied  
FEATURES  
. 1K x 36, 2K x 18, 4K x 9  
configurations  
. Dynamic and static transient  
upset hardness through 1x109  
. Empty, full, half full, 1/4 full,  
¾ full, error flags  
. Fabricated with RICMOS™ IV  
Silicon on Insulator (SOI) 0.8  
µm process (Leff = 0.65µm)  
. Total dose hardness through  
1x106 rad(Si)  
rad(Si)/s  
. Parity generation/checking  
. Fully asynchronous with  
simultaneous read and write  
operation  
. Dose rate survivability through  
1x1011 rad(Si)/s  
. Soft error rate of <1x10-10  
upsets/bit-day  
. Output enable (OE)  
. Neutron hardness through  
. No latchup  
. CMOS or TTL compatible I/O  
. Single 5V ±10% power supply  
. Various flat pack options  
1x1014 cm-2  
. Read/write cycle times  
36 ns (-55°to 125°C)  
. Expandable in Width  

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