HVV1011-035 PDF预览

HVV1011-035

更新时间: 2025-07-27 05:38:47
品牌 Logo 应用领域
HVVI 晶体晶体管脉冲电子航空
页数 文件大小 规格书
2页 667K
描述
L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50μs Pulse, 5% Duty for TCAS and Mode-S Applications

HVV1011-035 数据手册

 浏览型号HVV1011-035的Datasheet PDF文件第2页 
The innovative Semiconductor Company!  
HVV1011-035 PRODUCT OVERVIEW  
TM  
L-Band Avionics Pulsed Power Transistor  
1030-1090MHz, 50µs Pulse, 5% Duty  
for TCAS and Mode-S Applications  
DESCRIPTION  
PaCKaGE  
The high power HVV1011-035 device is a high voltage  
silicon enhancement mode RF transistor designed for  
L-Band pulsed avionics applications operating over  
the frequency range from 1030MHz to 1090MHz.  
FEaTURES  
High Power Gain  
Excellent Ruggedness  
48V Supply Voltage  
The device resides in a Surface Mount Package with  
a ceramic lid. The SM200 package style is qualified for  
gross leak test – MIL-STD-883, Method 1014.  
aBSOLUTE MaXIMUM RaTINGS  
Symbol Parameter  
Value  
95  
Drain-Source Voltage 1
Unit  
V
V
VDSS  
VGS  
Gate-Source Voltage  
10  
RUGGEDNESS  
IDSX  
Drain Current  
2
A
PD1,2  
Power Dissipation  
Storage Temperature -65 to  
+200  
Junction  
Temperature  
116  
W
°C  
The HVV1011-035 device is capable of withstanding an  
output load mismatch corresponding to a 20:1 VSWR at  
all phase angles and rated output power and operating  
voltage across the frequency band of operation  
TS  
TJ  
200  
°C  
Symbol  
Parameter Test Condition Max  
Units  
THERMaL CHaRaCTERISTICS  
LMT1  
Load  
F = 20:1  
VSWR  
1060MHz  
Mismatch  
Tolerance  
Symbol Parameter  
Max  
1.5  
Unit  
1
Thermal Resistance  
°C/W  
LJJC  
ELECTRICaL CHaRaCTERISTICS  
Symbol  
VBR(DSS)  
IDSS  
Parameter  
Conditions  
Typ  
102  
1
Units  
Drain-Source Breakdown  
Drain Leakage Current  
Gate Leakage Current  
Power Gain  
Input Return Loss  
Drain Efficiency  
Pulse Droop  
VGS=0V,ID=12mmAA  
VGS=0V,VDS=48V  
V
<25  
!A  
!A  
dB  
dB  
%
IGSS  
VGS=5V,VDS=0V  
<1  
GP1  
POUT=35W,F=1060MHz  
POUT=35W,F=1060MHz  
20  
8
IRL1  
1
POUT=35W,F=1060MHz  
52  
<0.2  
LJJC  
PD1  
POUT=35W,F=1060MHz  
dB  
1Under Pulse Conditions: Pulse Width = 50 µsec, Pulse Duty Cycle = 5% at VDD = 48V, IDQ = 15mA  
2Rated at TCASE = 25°C  
For additional information:  
HVVi Semiconductors, Inc.  
EG-01-PO01X6  
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com  
10235 S. 51st St. Suite 100  
10/13/08  
1
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.  
Phoenix, AZ. 85044  

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