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HVV1214-075 PDF预览

HVV1214-075

更新时间： 2024-11-25 05:38:47
品牌 Logo 应用领域
HVVI 晶体晶体管脉冲雷达
页数 文件大小 规格书
2页 515K
描述
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications

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HVV1214-075 数据手册

 浏览型号HVV1214-075的Datasheet PDF文件第2页 
The innovative Semiconductor Company!  
HVV1214-075 PRODUCT OVERVIEW  
TM  
L-Band Radar Pulsed Power Transistor  
1200-1400 MHz, 200μs Pulse, 10% Duty  
for Ground Based Radar Applications  
DESCRIPTION  
PaCKaGE  
The high power HVV1214-075 device is a high voltage  
silicon enhancement mode RF transistor designed for  
L-Band pulsed radar applications operating over the  
frequency range from 1.2GHz to 1.4GHz.  
FEaTURES  
• High Power Gain  
• Excellent Ruggedness  
• 48V Supply Voltage  
The device resides in a two-lead metal flanged package  
with liquid crystal polymer lid. The HV400 package style  
is qualified for gross leak test – MIL-STD-750D, Method  
1071.6, Test Condition C.  
aBSOLUTE MaXIMUM RaTINGS  
Symbol Parameter  
Value  
Unit  
V
V
A
W
°C  
VDSS  
VGS  
Drain-Source Voltage 19055  
Gate-Source Voltage  
10  
8
250  
RUGGEDNESS  
IDSX  
PD  
Drain Current  
Power Dissipation  
2
The HVV1214-075 device is capable of withstanding an  
output load mismatch corresponding to a 20:1 VSWR over  
all phase angles and rated output power and operating  
voltage across the frequency band of operation.  
TS  
Storage Temperature -65 to  
+200  
TJ  
Junction  
Temperature  
200  
°C  
Symbol Parameter  
Test Condition  
POUT = 75W  
Max  
20:1  
Units  
VSWR  
LMT1  
Load  
Mismatch  
Tolerance  
THERMaL CHaRaCTERISTICS  
F = 1400MHz  
Symbol Parameter  
Max  
Unit  
°C/W  
1
LJJC  
Thermal Resistance  
0.70  
ELECTRICaL CHaRaCTERISTICS  
Symbol  
VBR(DSS)  
IDSS  
Parameter  
Conditions  
VGS=0V,ID=1
VGS=0V,VDS=48V  
Typ  
Units  
V
3mA  
102  
Drain-Source Breakdown  
Drain Leakage Current  
Gate Leakage Current  
Power Gain  
Input Return Loss  
Drain Efficiency  
1
<80  
<
µA  
µA  
dB  
dB  
%
IGSS  
VGS=5V,VDS=0V  
<1  
21  
9
44  
<0.6  
GP1  
POUT=75W,F=1200MHz,1400MHz  
POUT=75W,F=1200MHz,1400MHz  
POUT=75W,F=1200MHz,1400MHz  
POUT=75W,F=1200MHz,1400MHz  
IRL1  
1
džD  
PD1  
Pulse Droop  
dB  
1Under Pulse Conditions: Pulse Width = 200μsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA  
2Rated at TCASE = 25°C  
For additional information:  
HVVi Semiconductors, Inc.  
EG-01-PO08X4  
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com  
10235 S. 51st St. Suite 100  
10/13/08  
1
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.  
Phoenix, AZ. 85044  
12

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