5秒后页面跳转
捷配首页

Datasheet > HVV1214-025
HVV1214-025 PDF预览

HVV1214-025

更新时间： 2024-11-21 05:38:47
品牌 Logo 应用领域
HVVI 晶体晶体管脉冲雷达
页数 文件大小 规格书
2页 681K
描述
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications

阅读下载

中文翻译

获取价格

HVV1214-025 数据手册

 浏览型号HVV1214-025的Datasheet PDF文件第2页 
The innovative Semiconductor Company!  
HVV1214-025 PRODUCT OVERVIEW  
TM  
L-Band Radar Pulsed Power Transistor  
1200-1400 MHz, 200µs Pulse, 10% Duty  
for Ground Based Radar Applications  
DESCRIPTION  
PaCKaGE  
The high power HVV1214-025 device is a high voltage  
silicon enhancement mode RF transistor designed for  
L-Band pulsed radar applications operating over the  
frequency range from 1.2GHz to 1.4GHz.  
FEaTURES  
• High Power Gain  
• Excellent Ruggedness  
• 48V Supply Voltage  
The device resides in a Surface Mount Transistor Package  
with a ceramic lid. The SM200 package style is qualified  
for gross leak test – MIL-STD-883, Method 1014.  
aBSOLUTE MaXIMUM RaTINGS  
Symbol Parameter  
Value  
95  
Drain-Source Voltage 105  
Unit  
V
VDSS  
VGS  
IDSX  
PD1,2  
TS  
Gate-Source Voltage  
Drain Current  
10  
2
V
A
RUGGEDNESS  
Power Dissipation  
116  
W
°C  
The HVV1214-025 device is capable of withstanding an  
output load mismatch corresponding to a 20:1 VSWR over  
all phase angles and rated output power and operating  
voltage across the frequency band of operation.  
Storage Temperature -65 to  
+200  
TJ  
Junction  
Temperature  
200  
°C  
Symbol Parameter  
Test Condition  
Max  
Units  
THERMaL CHaRaCTERISTICS  
LMT1  
Load  
POUT = 300W  
20:1  
VSWR  
Mismatch  
Tolerance  
F = 11039000MHz
Symbol Parameter  
Max  
1.5  
Unit  
1
Thermal Resistance  
°C/W  
LJJC  
ELECTRICaL CHaRaCTERISTICS  
Symbol  
VBR(DSS)  
IDSS  
Parameter  
Conditions  
VGS=0V,ID=1
Typ  
102  
1
Units  
V
2mA  
Drain-Source Breakdown  
Drain Leakage Current  
Gate Leakage Current  
Power Gain  
<25  
VGS=0V,VDS=48V  
VGS=5V,VDS=0V  
POUT=25W,F=11300MHz
POUT=25W,F=11300MHz
POUT=25W,F=11300MHz
POUT=25W,F=11300MHz
!A  
!A  
dB  
dB  
%
IGSS  
<1  
GP1  
17.5  
8
49  
IRL1  
Input Return Loss  
Drain Efficiency  
Pulse Droop  
1
LJJC  
PD1  
<0.2  
dB  
1Under Pulse Conditions: Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA  
2Rated at TCASE = 25°C  
For additional information:  
HVVi Semiconductors, Inc.  
EG-01-PO05X5  
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com  
10235 S. 51st St. Suite 100  
10/13/08  
1
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.  
Phoenix, AZ. 85044  
12

中文翻译

下载PDF

与HVV1214-025相关器件

型号 品牌 获取价格 描述 数据表
HVV1214-025S HVVI

获取价格

 		L-Band Radar Pulsed Power Transistor 1200-140
HVV1214-075 HVVI

获取价格

 		L-Band Radar Pulsed Power Transistor 1200-140
HVV1214-100 HVVI

获取价格

 		L-Band Radar Pulsed Power Transistor 1200-140
HVV1214-100-EK HVVI

获取价格

 		L-Band Radar Pulsed Power Transistor 1200-140
HVV1214-140 ASI

获取价格

 		All Gold Bonding Scheme
HVV1214-140-EK ASI

获取价格

 		All Gold Bonding Scheme
HVW VISHAY

获取价格

 		Metal Alloy Resistors, Special Purpose, High Voltage
HVW0011K000JBJ VISHAY

获取价格

 		Metal Alloy Resistors, Special Purpose, High Voltage
HVW0011K000JEE VISHAY

获取价格

 		Metal Alloy Resistors, Special Purpose, High Voltage
HVW0011K000JEK VISHAY

获取价格

 		Metal Alloy Resistors, Special Purpose, High Voltage

与HVV1214-025相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证