HVV1214-025S PDF预览

HVV1214-025S

更新时间: 2025-07-27 05:38:47
品牌 Logo 应用领域
HVVI 晶体晶体管脉冲雷达
页数 文件大小 规格书
2页 225K
描述
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty

HVV1214-025S 数据手册

 浏览型号HVV1214-025S的Datasheet PDF文件第2页 
HVV1214-025  
L-Band Radar Pulsed Power Transistor  
1200-1400 MHz, 200µs Pulse, 10% Duty  
DESCRIPTION  
PACKAGE  
The high power HVV1214-25 device is a high  
voltage silicon enhancement mode RF transistor  
designed for L-Band pulsed radar applications  
operating over the frequency range from  
1.2 GHz to 1.4 GHz.  
FEATURES  
High Power Gain  
Excellent Ruggedness  
48V Supply Voltage  
The device resides in a Surface Mount  
Transistor Package with a ceramic lid. The  
SMT package style is qualified for gross leak  
test – MIL-STD-750D, Method 1071.6, Test  
Condition C.  
ABSOLUTE MAXIMUM RATINGS  
Symbol Parameter  
Value  
Unit  
V
V
A
W
°C  
RUGGEDNESS  
VDSS  
VGS  
Drain-Source Voltage 105  
Gate-Source Voltage  
Drain Current  
10  
2
116  
IDSX  
The HVV1214-25 device is capable of  
withstanding an output load mismatch  
corresponding to a 20:1 VSWR over all phase  
angles and rated output power and operating  
voltage across the frequency band of  
operation.  
2
PD  
Power Dissipation  
TS  
Storage Temperature -65 to  
+200  
TJ  
Junction  
Temperature  
200  
°C  
Symbol Parameter  
Test Condition  
POUT = 25W  
Max  
20:1  
Units  
VSWR  
LMT1  
Load  
THERMAL CHARACTERISTICS  
Mismatch  
Tolerance  
F = 1400 MHz  
Symbol Parameter  
Max  
1.5  
Unit  
°C/W  
1
θJC  
Thermal Resistance  
ELECTRICAL CHARACTERISTICS  
Symbol  
VBR(DSS)  
IDSS  
Parameter  
Conditions  
Typ  
110  
<10  
<1  
17.5  
8
Units  
V
Drain-Source Breakdown  
Drain Leakage Current  
Gate Leakage Current  
Power Gain  
Input Return Loss  
Drain Efficiency  
VGS=0V,ID=1mA  
VGS=0V,VDS=48V  
VGS=5V,VDS=0V  
POUT=25W,F=1200,1400MHz  
POUT=25W,F=1200,1400MHz  
POUT=25W,F=1200,1400MHz  
POUT=25W,F=1200,1400MHz  
µA  
µA  
dB  
dB  
%
IGSS  
GP1  
IRL1  
1
ηD  
49  
<0.2  
PD1  
Pulse Droop  
dB  
1.) Under Pulse Conditions: Pulse Width = 200 µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA  
2.) Rated at TCASE = 25°C  
HVVi Semiconductors, Inc.  
10235 S. 51st St. Suite 100  
Phoenix, Az. 85044  
For additional information, visit: www.hvvi.com  
HVVi Semiconductors, Inc. Confidential  
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.  
April 23 2008  
1

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