Datasheet > HVV1214-100

HVV1214-100

更新时间： 2024-11-21 05:38:47

品牌	Logo	应用领域
HVVI		晶体晶体管脉冲雷达
页数	文件大小	规格书
5页	831K
描述
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications

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HVV1214-100 数据手册

The innovative Semiconductor Company!

HVV1214-100 HigH Voltage, HigH Ruggedness

L-Band Radar Pulsed Power Transistor

1200-1400 MHz, 200μs Pulse, 10% Duty

For Ground Based Radar Applications

FeatuRes

• Silicon MOSFET Technology

• Operation from 24V to 50V

• High Power Gain

• Extreme Ruggedness

• Internal Input and Output Matching

• Excellent Thermal Stability

• All Gold Bonding Scheme

tYPiCal PeRFoRManCe

High voltage vertical technology is well suited for high power pulsed applications in the

L-Band including G-DME,A-DME, IFF,TCAS and Mode-S applications.

MODE

FREQUENCY

(MHz)

VDD

(V)

IDQ

(mA)

Power

(W)

GAIN

(dB)

(%)

IRL VSWR

(dB)

Class AB

1400

100

120

-8

20:1

Table 1: Typical RF Performance in broadband text ﬁxture at 25°C temperature with RF pulse conditions of

pulse width = 200µs and pulse period = 2ms.

desCRiPtion

The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for

pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET™ technology

produces over 100W of pulsed output power while offering high gain,high efﬁciency,and ease of matching

with a 50V supply. The vertical device structure assures high reliability and ruggedness as the device is

speciﬁed to withstand a 20:1 VSWR at all phase angles under full rated output power.

oRdeRing inFoRMation

Device Part Number: HVV1214-100

Demo Kit Part Number: HVV1214-100-EK

Available through Richardson Electronics (http://rfwireless.rell.com/)

ISO 9001:2000 Certiﬁed

Tel: (866) 429-HVVi (4884) or visit www.hvvi.com

EG-01-DS06A

12/11/08

HVVi Semiconductors, Inc.

10235 S. 51st St. Suite 100

Phoenix, AZ. 85044

12 3 4 5

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