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HVV1012-100 PDF预览

HVV1012-100

更新时间： 2024-11-21 05:38:47
品牌 Logo 应用领域
HVVI 晶体晶体管脉冲电子航空
页数 文件大小 规格书
2页 846K
描述
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications

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HVV1012-100 数据手册

 浏览型号HVV1012-100的Datasheet PDF文件第2页 
The innovative Semiconductor Company!  
HVV1012-100 PRODUCT OVERVIEW  
TM  
L-Band Avionics Pulsed Power Transistor  
1025-1150MHz, 10μs Pulse, 1% Duty  
for DME and TCAS Applications  
DESCRIPTION  
PaCKaGE  
The high power HVV1012-100 device is a high voltage  
silicon enhancement mode RF transistor designed for  
L-Band pulsed avionics applications operating over  
the frequency range from 1025MHz to 1150MHz.  
FEaTURES  
• High Power Gain  
• Excellent Ruggedness  
• 48V Supply Voltage  
The device resides in a two-lead metal flanged package  
with liquid crystal polymer lid. The HV400 package style is  
qualified for gross leak test – MIL-STD-883, Method 1014.  
aBSOLUTE MaXIMUM RaTINGS  
Symbol Parameter  
Value  
95  
Drain-Source Voltage 
Unit  
V
V
A
W
°C  
VDSS  
VGS  
Gate-Source Voltage  
Drain Current  
Power Dissipation  
10  
8
1250  
RUGGEDNESS  
IDSX  
2
PD  
The HVV1012-100 device is capable of withstanding an  
output load mismatch corresponding to a 20:1 VSWR at  
rated output power and operating voltage across the fre-  
quency band of operation.  
TS  
Storage Temperature -65 to  
+200  
TJ  
Junction  
Temperature  
200  
°C  
Symbol Parameter  
Test Condition  
POUT = 100W  
Max  
20:1  
Units  
VSWR  
LMT1  
Load  
Mismatch  
Tolerance  
THERMaL CHaRaCTERISTICS  
F = 1150 MHz  
Symbol Parameter  
Max  
0.14  
Unit  
°C/W  
1
LJJC  
Thermal Resistance  
ELECTRICaL CHaRaCTERISTICS  
Symbol  
VBR(DSS)  
IDSS  
Parameter  
Conditions  
VGS=0V,ID=1mA  
VGS=0V,VDS=48V  
VGS=5V,VDS=0V  
POUT=100W,F=1025,1150MHz  
POUT=100W,F=1025,1150MHz  
POUT=100W,F=1025,1150MHz  
POUT=100W,F=1025,1150MHz  
Typ  
Units  
V
µA  
µA  
dB  
dB  
%
3mA  
102  
110  
Drain-Source Breakdown  
Drain Leakage Current  
Gate Leakage Current  
Power Gain  
Input Return Loss  
Drain Efficiency  
<80  
<10  
IGSS  
<1  
20.5  
11  
50  
<0.3  
GP1  
IRL1  
1
džD  
PD1  
Pulse Droop  
dB  
1Under Pulse Conditions: Pulse Width = 10µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA  
2Rated at TCASE = 25°  
For additional information:  
HVVi Semiconductors, Inc.  
EG-01-PO04X5  
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com  
10235 S. 51st St. Suite 100  
10/13/08  
1
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.  
Phoenix, AZ. 85044  
12

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