Datasheet > HVV1012-550-EK

HVV1012-550-EK

更新时间： 2024-11-26 01:20:55

品牌	Logo	应用领域
ASI		/
页数	文件大小	规格书
9页	1151K
描述
Excellent Thermal Stability

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HVV1012-550-EK 数据手册

PACKAGE

FEATURES

Silicon MOSFET Technology

Operation from 24V to 50V

High Power Gain

Extreme Ruggedness

Internal Input and Output Matching

Excellent Thermal Stability

All Gold Bonding Scheme

Pb-free and RoHS Compliant

TYPICAL PERFORMANCE

Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with

RF pulse conditions of pulse width = 10 s and pulse duty cycle = 1%.

DESCRIPTION

The high power HVV1012-550 device is an enhancement mode RF MOSFET power

transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The

high voltage MOSFET technology produces over 550W of pulsed output power while

offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical

device structure assures high reliability and ruggedness as the device is specified to

withstand a 20:1 VSWR at all phase angles under full rated output power.

ORDERING INFORMATION

Device Part Number: HVV1012-550

Evaluation Kit Part Number: HVV1012-550-EK

REV. A

7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM

Specifications are subject to change without notice.

12 3 4 5 6 7...9

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