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HS0-4424DEH-Q

更新时间: 2024-11-11 20:58:23
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动接口集成电路
页数 文件大小 规格书
15页 522K
描述
HALF BRDG BASED MOSFET DRIVER

HS0-4424DEH-Q 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.61接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-609代码:e4峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Gold (Au)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HS0-4424DEH-Q 数据手册

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DATASHEET  
Dual, Noninverting Power MOSFET Radiation Hardened  
Drivers  
HS-4424DRH, HS-4424DEH  
Features  
The radiation hardened HS-4424 family are noninverting, dual,  
monolithic high-speed MOSFET drivers designed to convert low  
voltage control input signals into higher voltage, high current  
outputs. The HS-4424DRH, HS-4424DEH are fully tested  
across the 8V to 18V operating range.  
• Electrically screened to DLA SMD# 5962-99560  
• QML qualified per MIL-PRF-38535 requirements  
• Latch-up immune  
• Radiation environment  
• High dose rate (50-300rad(Si)/s). . . . . . . . . . . . . 300krad(Si)  
The inputs of these devices can be directly driven by the  
HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS  
type logic devices. The fast rise times and high current outputs  
allow very quick control of high gate capacitance power  
MOSFETs in high frequency applications.  
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*  
*Limit established by characterization  
• IPEAK. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (minimum)  
• Matched rise and fall times (CL = 4300pF). . 75ns (maximum)  
The high current outputs minimize power losses in MOSFETs by  
rapidly charging and discharging the gate capacitance. The  
output stage incorporates a low voltage lockout circuit that  
puts the outputs into a three-state mode when the supply  
voltage is below its Undervoltage Lockout (UVLO) threshold  
voltage.  
• Low voltage lockout feature . . . . . . . . . . . . . . . . . . . . . . . . <8V  
• Wide supply voltage range . . . . . . . . . . . . . . . . . . . . 8V to 18V  
• Propagation delay . . . . . . . . . . . . . . . . . . . .250ns (maximum)  
• Consistent delay times with VCC changes  
• Low power consumption  
- 40mW with inputs high  
- 20mW with inputs low  
Constructed with Intersil’s dielectrically isolated Rad Hard  
Silicon Gate (RSG) BiCMOS process, these devices are immune  
to single event latch-up and have been specifically designed to  
provide highly reliable performance in harsh radiation  
environments.  
• Low equivalent input capacitance . . . . . . . . . . 3.2pF (typical)  
• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >4kV  
TABLE 1. HS4424 PRODUCT FAMILY SPECIFIC UVLO Vth  
Applications  
• Switching power supplies  
• DC/DC converters  
PART NUMBER  
UVLO (V)  
<10  
HS-4424RH  
HS-4424EH  
• Motor controllers  
HS4424BRH  
HS4424BEH  
<7.5  
<8  
HS4424DRH  
HS4424DEH  
7.7  
+8V TO +18V  
VCC  
UVLO_f  
7.6  
UVLO_r  
7.5  
OUT A  
IN A  
PWM  
7.4  
7.3  
7.2  
CONTROLLER  
IN B  
OUT B  
HS-1825ARH  
HS-4424D  
GND  
-55  
25  
125  
TEMPERATURE (°C)  
FIGURE 1. TYPICAL APPLICATION  
FIGURE 2. UNDERVOLTAGE LOCKOUT vs TEMPERATURE  
October 15, 2015  
FN8747.2  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
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