Datasheet > HS0-4424RH-Q

HS0-4424RH-Q

更新时间： 2024-09-23 21:03:23

品牌	Logo	应用领域
瑞萨 - RENESAS		驱动信息通信管理接口集成电路驱动器
页数	文件大小	规格书
3页	177K
描述
BUF OR INV BASED MOSFET DRIVER

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HS0-4424RH-Q 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	DIE,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.71
高边驱动器：	NO	接口集成电路类型：	BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：	R-XUUC-N	JESD-609代码：	e4
功能数量：	1	最高工作温度：	125 °C
最低工作温度：	-55 °C	标称输出峰值电流：	2 A
封装主体材料：	UNSPECIFIED	封装代码：	DIE
封装形状：	RECTANGULAR	封装形式：	UNCASED CHIP
峰值回流温度（摄氏度）：	NOT SPECIFIED	最大供电电压：	18 V
最小供电电压：	12 V	表面贴装：	YES
技术：	BICMOS	温度等级：	MILITARY
端子面层：	Gold (Au)	端子形式：	NO LEAD
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
总剂量：	300k Rad(Si) V	断开时间：	0.25 µs
接通时间：	0.25 µs	Base Number Matches：	1

HS0-4424RH-Q 数据手册

Radiation Hardened Dual, Non-Inverting Power MOSFET

Drivers

HS-4424RH, HS-4424EH,

HS-4424BRH, HS-4424BEH

Features

• Electrically screened to DESC SMD # 5962-99560

• QML qualified per MIL-PRF-38535 requirements

• EH version acceptance tested to 50krad(Si) (LDR)

The Radiation Hardened HS-4424RH, HS-4424EH,

HS-4424BRH and HS-4424BEH are non-inverting, dual,

monolithic high-speed MOSFET drivers designed to convert TTL

level signals into high current outputs at voltages up to 18V.

• Radiation environment

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)

- Latch-up immune

The inputs of these devices are TTL compatible and can be

directly driven by our HS-1825ARH PWM device or by our

ACS/ACTS and HCS/HCTS type logic devices. The fast rise

times and high current outputs allow very quick control of high

gate capacitance power MOSFETs in high frequency

applications.

- Low dose rate immune

• I

PEAK

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (min)

• Matched rise and fall times (C = 4300pF) . . . . . . 75ns (max)

• Low voltage lock-out feature

The high current outputs minimize power losses in MOSFETs by

rapidly charging and discharging the gate capacitance. The

output stage incorporates a low voltage lock-out circuit that

puts the outputs into a three-state mode when the supply

voltage drops below 10V for the HS-4424RH, HS-4424EH and

7.5V for the HS-4424BRH, HS-4424BEH.

- HS-4424RH, HS-4424EH. . . . . . . . . . . . . . . . . . . . . . < 10.0V

- HS-4424BRH, HS-4424BEH . . . . . . . . . . . . . . . . . . . . < 7.5V

• Wide supply voltage range . . . . . . . . . . . . . . . . . . . 12V to 18V

• Prop delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .250ns (max)

• Consistent delay times with V changes

Constructed with the Intersil dielectrically isolated Rad Hard

Silicon Gate (RSG) BiCMOS process, these devices are immune

to Single Event Latch-up and have been specifically designed

to provide highly reliable performance in harsh radiation

environments.

• Low power consumption

- 40mW with inputs high

- 20mW with inputs low

• Low equivalent input capacitance . . . . . . . . . . . . . 3.2pF (typ)

• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>4000V

Specifications for Rad Hard QML devices are controlled by the

Defense Logistics Agency Land and Maritime (DLA). The SMD

numbers listed here must be used when ordering.

Applications

• Switching power supplies

• DC/DC converters

Detailed Electrical Specifications for these devices are

contained in SMD 5962-99560.

• Motor controllers

Pin Configuration

HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH

(FLATPACK CDFP4-F16)

TOP VIEW

IN A

OUT A

GND A

GND B

OUT B

IN B

NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-bonded to their

same electrical points on the die.

September 24, 2013

FN4739.2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

12 3

中文翻译

下载PDF

与HS0-4424RH-Q相关器件

型号	品牌	获取价格	描述	数据表
HS-0506RH	INTERSIL	获取价格	Radiation Hardened Single 16/Differential 8 Channel CMOS Analog Multiplexer
HS-0507RH	INTERSIL	获取价格	Radiation Hardened Single 16/Differential 8 Channel CMOS Analog Multiplexer
HS0-508BRH-Q	RENESAS	获取价格	8-CHANNEL, SGL ENDED MULTIPLEXER, UUC, DIE
HS-0508RH	INTERSIL	获取价格	Radiation Hardened Single 8/Differential 4-Channel CMOS Analog Multiplexers
HS-0509RH	INTERSIL	获取价格	Radiation Hardened Single 8/Differential 4-Channel CMOS Analog Multiplexers
HS0-5104AEH-Q	INTERSIL	获取价格	Radiation Hardened, Low Noise Quad Operational Amplifiers
HS0-5104ARH/SAMPLE	RENESAS	获取价格	QUAD OP-AMP, 3000uV OFFSET-MAX, 8MHz BAND WIDTH, UUC14, ROHS COMPLIANT, DIE-14
HS0-5104ARH-Q	INTERSIL	获取价格	Radiation Hardened Low Noise Quad Operational Amplifier
HS0-5104ARHSAMPLE	INTERSIL	获取价格	Radiation Hardened, Low Noise Quad Operational Amplifiers
HS0512J	ETC	获取价格	AREA CCD IMAGE ARRAY

与HS0-4424RH-Q相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

76
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

67
SL74HC10N：高性能三输入与非门解析
2024-09-03

151
AIC1781A 电池充电控制器深度解析
2024-09-03

133

产品中心

服务支持

精选活动

关于我们

帮助中心

HS0-4424RH-Q

HS0-4424RH-Q 技术参数

HS0-4424RH-Q 数据手册

与HS0-4424RH-Q相关器件

与HS0-4424RH-Q相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HS0-4424RH-Q

HS0-4424RH-Q 技术参数

HS0-4424RH-Q 数据手册

与HS0-4424RH-Q相关器件

与HS0-4424RH-Q相关文章

您还可以找

您在本页遇到什么问题？