HS-303ARH, HS-303BRH
®
Data Sheet
July 7, 2008
FN6411.1
Radiation Hardened
Features
CMOS Dual SPDT Analog Switch
• QML, Per MIL-PRF-38535
The HS-303ARH and HS-303BRH analog switches are
monolithic devices fabricated using Intersil’s dielectrically
isolated Radiation Hardened Silicon Gate (RSG) process
technology to insure latch-up free operation. They are pinout
compatible and functionally equivalent to the HS-303RH, but
offer improved 300kRAD(Si) total dose capability. These
switches offers low-resistance switching performance for
analog voltages up to the supply rails. “ON” resistance is low
and stays reasonably constant over the full range of
operating voltage and current. “ON” resistance also stays
reasonably constant when exposed to radiation.
• Radiation Performance
5
- Total Dose: 3x10 RAD(Si)
2
- SEE: For LET = 60MeV-mg/cm at 60° Incident Angle,
<150pC Charge Transferred to the Output of an Off
Switch
• No Latch-Up, Dielectrically Isolated Device Islands
• Pinout and Functionally Compatible with Intersil
HS-303RH and HI-303 Series Analog Switches
• Analog Signal Range Equal to the Supply Voltage Range
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post-Rad)
Break-before-make switching is controlled by 5V digital
inputs. The HS-303ARH should be operated with nominal
±15V supplies, while the HS-303BRH should be operated
with nominal ±12V supplies.
• Low r
ON
. . . . . . . . . . . . . . . . . . . . . . 70Ω (Max, Post-Rad)
• Low Standby Supply Current . . . . . . . . . . +150µA/-100µA
(Max, Post-Rad)
Specifications
Pinouts
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
HS1-303ARH, HS-303BRH (SBDIP), CDIP2-T14
TOP VIEW
1
2
3
4
5
6
7
14
13
12
11
10
9
V+
S4
D4
D2
S2
IN2
V-
NC
S3
Detailed Electrical Specifications for the HS-303ARH and
HS-303BRH are contained in SMD 5962-95813. A “hot-link”
is provided from our website for downloading
D3
D1
S1
IN1
GND
8
HS9-303ARH, HS-303BRH (FLATPACK) CDFP3-F14
TOP VIEW
1
2
3
4
5
6
7
14
13
12
11
10
9
V+
S4
D4
D2
S2
IN2
V-
NC
S3
D3
D1
S1
IN1
GND
8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1
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