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HS0-4423RH-Q PDF预览

HS0-4423RH-Q

更新时间： 2024-09-23 21:20:27
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动信息通信管理接口集成电路驱动器
页数 文件大小 规格书
2页 55K
描述
2A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, UUC16, GREEN, DIE-16

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HS0-4423RH-Q 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：DIE
包装说明：DIE,针数：16
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.27
高边驱动器：NO接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-XUUC-NJESD-609代码：e3
功能数量：1端子数量：16
最高工作温度：125 °C最低工作温度：-55 °C
标称输出峰值电流：2 A封装主体材料：UNSPECIFIED
封装代码：DIE封装形状：RECTANGULAR
封装形式：UNCASED CHIP峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大供电电压：18 V
最小供电电压：12 V表面贴装：YES
技术：BICMOS温度等级：MILITARY
端子面层：MATTE TIN端子形式：NO LEAD
端子位置：UPPER处于峰值回流温度下的最长时间：NOT SPECIFIED
总剂量：300k Rad(Si) V断开时间：0.25 µs
接通时间：0.25 µsBase Number Matches：1

HS0-4423RH-Q 数据手册

 浏览型号HS0-4423RH-Q的Datasheet PDF文件第2页 
HS-4423RH, HS-4423BRH  
Data Sheet  
June 1999  
File Number 4564.4  
Radiation Hardened Dual, Inverting Power  
MOSFET Drivers  
Features  
• Electrically Screened to DESC SMD # 5962-99511  
• QML Qualified per MIL-PRF-38535 Requirements  
• Radiation Environment  
The Radiation Hardened HS-4423RH and the HS-4423BRH  
are inverting, dual, monolithic high-speed MOSFET drivers  
designed to convert TTL level signals into high current  
outputs at voltages up to 18V.  
5
- Total Dose (Max). . . . . . . . . . . . . . . . . .3 x 10 RAD(SI)  
- Latch-Up Immune  
The inputs of these devices are TTL compatible and can be  
directly driven by our HS-1825ARH PWM device or by our  
ACS/ACTS and HCS/HCTS type logic devices. The fast rise  
times and high current outputs allow very quick control of  
high gate capacitance power MOSFETs, like our Rad Hard  
FS055, in high frequency applications.  
- Low Dose Rate Immune  
• I  
PEAK  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (Typ)  
• Matched Rise and Fall Times (C = 4300pF) . . . 75ns (Max)  
L
• Low Voltage Lock-Out Feature  
- HS-4423RH . . . . . . . . . . . . . . . . . . . . . . . . . . . . <10.0V  
- HS-4423BRH . . . . . . . . . . . . . . . . . . . . . . . . . . . . <7.5V  
• Wide Supply Voltage Range. . . . . . . . . . . . . . . 12V to 18V  
The high current outputs minimize power losses in  
MOSFETs by rapidly charging and discharging the gate  
capacitance. The output stage incorporates a low voltage  
lock-out circuit that puts the outputs into a three-state mode  
when the supply voltage drops below 10V for the  
HS-4423RH and 7.5V for the HS-4423BRH.  
• Prop Delay . . . . . . . . . . . . . . . . . . . . . . . . . . .250ns (Max)  
• Consistent Delay Times with V  
Changes  
CC  
• Low Power Consumption  
- 40mW with Inputs High  
- 20mW with Inputs Low  
Constructed with the Intersil dielectrically isolated Rad Hard  
Silicon Gate (RSG) BiCMOS process, these devices are  
immune to Single Event Latch-up and have been specifically  
designed to provide highly reliable performance in harsh  
radiation environments  
• Low Equivalent Input Capacitance . . . . . . . . . .3.2pF (Typ)  
• ESD Protected . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4000V  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
Applications  
• Switching Power Supplies  
• DC/DC Converters  
• Motor Controllers  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-99511. A “hot-link” is provided  
on our homepage for downloading.  
www.intersil.com/spacedefense/space.asp  
Ordering Information  
Pinout  
INTERNAL  
MKT. NUMBER  
TEMP. RANGE  
o
ORDERING NUMBER  
5962F9951101VXC  
5962F9951101QXC  
HS9-4423RH/Proto  
5962F9951102VXC  
5962F9951102QXC  
HS9-4423BRH/Proto  
( C)  
HS-4423RH, HS-4423BRH (FLATPACK CDFP4-F16)  
TOP VIEW  
HS9-4423RH-Q  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
HS9-4423RH-8  
NC  
IN A  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
NC  
HS9-4423RH/Proto  
HS9-4423BRH-Q  
HS9-4423BRH-8  
HS9-4423BRH/Proto  
OUT A  
OUT A  
NC  
GND A  
GND B  
NC  
V
V
CC  
CC  
OUT B  
OUT B  
NC  
IN B  
NC  
NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-  
bonded to their same electrical points on the die.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
1
12

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