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HS0-303BEH-Q PDF预览

HS0-303BEH-Q

更新时间： 2024-11-09 19:30:51
品牌 Logo 应用领域
瑞萨 - RENESAS 光电二极管
页数 文件大小 规格书
5页 196K
描述
SGL POLE DOUBLE THROW SWITCH

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HS0-303BEH-Q 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：,Reach Compliance Code：compliant
HTS代码：8542.39.00.01风险等级：5.64
模拟集成电路 - 其他类型：SPDTJESD-609代码：e4
峰值回流温度（摄氏度）：NOT SPECIFIED端子面层：Gold (Au)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

HS0-303BEH-Q 数据手册

 浏览型号HS0-303BEH-Q的Datasheet PDF文件第2页浏览型号HS0-303BEH-Q的Datasheet PDF文件第3页浏览型号HS0-303BEH-Q的Datasheet PDF文件第4页浏览型号HS0-303BEH-Q的Datasheet PDF文件第5页 
Radiation Hardened CMOS Dual SPDT Analog Switch  
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH  
The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog  
switches are monolithic devices fabricated using Intersil’s  
Features  
• QML, Per MIL-PRF-38535  
• Radiation Performance  
dielectrically isolated Radiation Hardened Silicon Gate (RSG)  
process technology to insure latch-up free operation. They are  
pinout compatible and functionally equivalent to the  
HS-303RH, but offer improved 300kRAD(Si) total dose  
capability. These switches offers low-resistance switching  
performance for analog voltages up to the supply rails. “ON”  
resistance is low and stays reasonably constant over the full  
range of operating voltage and current. “ON” resistance also  
stays reasonably constant when exposed to radiation.  
Break-before-make switching is controlled by 5V digital inputs.  
The HS-303ARH should be operated with nominal ±15V  
supplies, while the HS-303BRH should be operated with  
nominal ±12V supplies.  
5
- Total Dose: 3x10 RAD(Si)  
2
- SEE: For LET = 60MeV-mg/cm at 60° Incident Angle,  
<150pC Charge Transferred to the Output of an Off Switch  
• No Latch-Up, Dielectrically Isolated Device Islands  
• Pinout and Functionally Compatible with Intersil HS-303RH  
and HI-303 Series Analog Switches  
• Analog Signal Range Equal to the Supply Voltage Range  
• Low Leakage. . . . . . . . . . . . . . . . . . . . .100nA (Max, Post-Rad)  
• Low r . . . . . . . . . . . . . . . . . . . . . . . . . . . 70Ω (Max, Post-Rad)  
ON  
• Low Standby Supply Current. . . . . . . . . . . . . +150µA/-100µA  
(Max, Post-Rad)  
Specifications  
Specifications for Rad Hard QML devices are controlled by the  
Defense Supply Center in Columbus (DSCC). The SMD numbers  
listed below must be used when ordering.  
Detailed Electrical Specifications for the HS-303ARH,  
HS-303AEH, HS-303BRH, HS-303BEH are contained in  
SMD 5962-95813. A “hot-link” is provided from our website for  
downloading  
Functional Diagram  
Pin Configurations  
HS1-303ARH, HS-303BRH  
(SBDIP), CDIP2-T14  
TOP VIEW  
N
P
IN  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V+  
S4  
D4  
D2  
S2  
IN2  
NC  
S3  
D
D3  
D1  
S1  
TRUTH TABLE  
SW1 AND SW2  
OFF  
IN1  
GND  
LOGIC  
SW3 AND SW4  
8
V-  
0
1
ON  
ON  
OFF  
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH  
(FLATPACK) CDFP3-F14  
TOP VIEW  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V+  
S4  
D4  
D2  
S2  
IN2  
V-  
NC  
S3  
D3  
D1  
S1  
IN1  
GND  
8
December 12, 2012  
FN6411.2  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas Inc. 2006, 2008, 2012. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
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