Datasheet > HRW0202B

HRW0202B

更新时间： 2024-02-20 12:44:19

品牌	Logo	应用领域
TYSEMI		二极管光电二极管
页数	文件大小	规格书
1页	58K
描述
Low forward voltage drop and suitable for high effifiency rectifying

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中文翻译

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HRW0202B 数据手册

Product specification

HRW0202B

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low forward voltage drop and suitable for

high effifiency rectifying.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

MPAK package is suittable for high density

surface mounting and high speed assembly.

1.Base

2.Emitter

3.collector

Absolute M axim um R atings T a = 25

P aram eter

R epetitive peak reverse voltage

A verage rectified current

S ym bol

V ^{R R M}

I^O

V alue

U nit

200

m A

N on-repetitive peak forward surge current

Junction tem perature

IF SM

T^j

125

S torage tem perature

T^stg

-55 to + 125

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Symbol

V^F

Conditions

Min

Typ

400

Max

Unit

I^F= 100 mA

V^R= 20 V

0.42

Reverse current

I^R

Thermal resistance

T^{sh( j-a )}

Polyimide board

Marking

S18

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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HRW0202BTR	HITACHI	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 20V V(RRM), Silicon
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HRW0202BTR-E	RENESAS	获取价格	0.1A, 20V, SILICON, SIGNAL DIODE
HRW0203A	TYSEMI	获取价格	Low forward voltage drop and suitable for high effifiency rectifying
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HRW0203A	HITACHI	获取价格	Silicon Schottky Barrier Diode for Rectifying
HRW0203A-E	RENESAS	获取价格	0.2A, 30V, SILICON, SIGNAL DIODE, MPAK-3
HRW0203ATL	HITACHI	获取价格	Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon