5秒后页面跳转
HRW0203B PDF预览

HRW0203B

更新时间: 2024-01-30 07:58:09
品牌 Logo 应用领域
瑞萨 - RENESAS 整流二极管肖特基二极管光电二极管
页数 文件大小 规格书
6页 71K
描述
Silicon Schottky Barrier Diode for Rectifying

HRW0203B 技术参数

生命周期:Obsolete包装说明:MPAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.71Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.5 V
JESD-30 代码:R-PDSO-G3最大非重复峰值正向电流:3 A
元件数量:1端子数量:3
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

HRW0203B 数据手册

 浏览型号HRW0203B的Datasheet PDF文件第2页浏览型号HRW0203B的Datasheet PDF文件第3页浏览型号HRW0203B的Datasheet PDF文件第4页浏览型号HRW0203B的Datasheet PDF文件第5页浏览型号HRW0203B的Datasheet PDF文件第6页 
HRW0203B  
Silicon Schottky Barrier Diode for Rectifying  
REJ03G0155-0100Z  
(Previous: ADE-208-1475)  
Rev.1.00  
Jan.06.2004  
Features  
Low forward voltage drop and suitable for high efficiency rectifying.  
MPAK package is suitable for high density surface mounting and high speed assembly.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
HRW0203B  
S21  
MPAK  
Pin Arrangement  
3
1. Anode  
2. NC  
2
1
(Top View)  
3. Cathode  
Rev.1.00, Jan.06.2004, page 1 of 5  

与HRW0203B相关器件

型号 品牌 获取价格 描述 数据表
HRW0302A RENESAS

获取价格

Silicon Schottky Barrier Diode for Rectifying
HRW0302A KEXIN

获取价格

Silicon Schottky Barrier Diode
HRW0302A TYSEMI

获取价格

Low forward voltage drop and suitable for high effifiency rectifying
HRW0302A HITACHI

获取价格

Silicon Schottky Barrier Diode for Rectifying
HRW0302ATL RENESAS

获取价格

暂无描述
HRW0302ATR HITACHI

获取价格

Rectifier Diode, Schottky, 1 Element, 0.3A, 20V V(RRM), Silicon
HRW0302ATR RENESAS

获取价格

0.3A, 20V, SILICON, SIGNAL DIODE
HRW0302ATR-E RENESAS

获取价格

暂无描述
HRW0502A RENESAS

获取价格

Silicon Schottky Barrier Diode for Rectifying
HRW0502A TYSEMI

获取价格

Low forward voltage drop and suitable for high effifiency rectifying