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HR1A3M

更新时间: 2024-11-20 22:48:35
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管功率双极晶体管
页数 文件大小 规格书
6页 122K
描述
On-chip resistor PNP silicon epitaxial transistor For mid-speed switching

HR1A3M 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.31
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JESD-30 代码:R-PSSO-F3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

HR1A3M 数据手册

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DATA SHEET  
COMPOUND TRANSISTOR  
HR1 SERIES  
on-chip resistor PNP silicon epitaxial transistor  
For mid-speed switching  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
Up to 2A high current drives such as IC outputs and actuators  
available  
On-chip bias resistor  
Low power consumption during drive  
HR1 SERIES LISTS  
Products  
HR1A3M  
HR1F3P  
HR1L3N  
HR1A4,  
Marking  
MP  
R1 (K)  
1.0  
R2 (K)  
1.0  
10  
MQ  
2.2  
MR  
4.7  
10  
MS  
10  
10  
HR1L2Q  
HR1F2Q  
HR1A4A  
MT  
0.47  
0.22  
4.7  
2.2  
10  
MU  
MX  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Base current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
IB(DC)  
PT **  
Tj  
Ratings  
60  
Unit  
V
60  
V
10  
V
1.0  
A
2.0  
A
0.02  
2.0  
A
Total power dissipation  
Junction temperature  
Storage temperature  
W
°C  
°C  
150  
Tstg  
55 to +150  
* PW 10 ms, duty cycle 50 %  
** When 0.7 mm × 16 cm2 ceramic board is used  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16184EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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