Datasheet > HR1A4A

HR1A4A

更新时间： 2024-11-21 10:55:31

品牌	Logo	应用领域
科信 - KEXIN		晶体数字晶体管
页数	文件大小	规格书
3页	168K
描述
Digital Transistors

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中文翻译

获取价格

数据手册

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HR1A4A 数据手册

SMD Type

Transistors

Digital Transistors

HR1A4A

Features

Up to 2A High Current Drives Such As IC Outputs and

Actuators Available

On-chip Bias Resistor

Low Power Consumption During Drive

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

Rating

-60

Unit

-60

V^EBO

-10

Collector Current (DC)

I^C(DC)

-1.0

Collector Current (Pulse)

Base Current (DC)

I^C(pulse)*1

I^B(DC)

P^T*2

T^j

-2.0

-0.02

2.0

Total Power Dissipation

Junction temperature

Storage temperature

150

Tstg

-55 to +150

*1 PW 10ms, Duty Cycle 50%

*2 When 0.7mm x 16cm²ceramic board is used.

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

-100

Unit

Collector Cut-off Current

VCB = -60V, IE = 0

VCE = -2.0V , IC = -0.1A

V^CE= -2.0V , IC = -0.5A

V^CE= -2.0V , IC = -1.0A

150

100

DC Current Gain

h^FE*

Collector Saturation Voltage

Low Level Input Voltage

Input Resistance

V^CE(sat)* IC = -500mA, IB = -10mA

0.20 0.35

-1.5

V^IL*

R¹

-0.3

V^CE= -5.0V, IC = -100

Emitter-Base Resistance

* PW 350 s, Duty Cycle 2%

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HR1A4M-T1	NEC	获取价格	1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN
HR1A4M-T2	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
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