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HR1A4M-AZ PDF预览

HR1A4M-AZ

更新时间: 2024-11-21 21:07:23
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 120K
描述
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

HR1A4M-AZ 数据手册

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DATA SHEET  
COMPOUND TRANSISTOR  
HR1 SERIES  
on-chip resistor PNP silicon epitaxial transistor  
For mid-speed switching  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
Up to 2A high current drives such as IC outputs and actuators  
available  
On-chip bias resistor  
Low power consumption during drive  
HR1 SERIES LISTS  
Products  
HR1A3M  
HR1F3P  
HR1L3N  
HR1A4,  
Marking  
MP  
R1 (K)  
1.0  
R2 (K)  
1.0  
10  
MQ  
2.2  
MR  
4.7  
10  
MS  
10  
10  
HR1L2Q  
HR1F2Q  
HR1A4A  
MT  
0.47  
0.22  
4.7  
2.2  
10  
MU  
MX  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Base current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
IB(DC)  
PT **  
Tj  
Ratings  
60  
Unit  
V
60  
V
10  
V
1.0  
A
2.0  
A
0.02  
2.0  
A
Total power dissipation  
Junction temperature  
Storage temperature  
W
°C  
°C  
150  
Tstg  
55 to +150  
* PW 10 ms, duty cycle 50 %  
** When 0.7 mm × 16 cm2 ceramic board is used  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16184EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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