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HR1A4M PDF预览

HR1A4M

更新时间: 2024-11-21 05:36:43
品牌 Logo 应用领域
科信 - KEXIN 晶体数字晶体管
页数 文件大小 规格书
3页 169K
描述
Digital Transistors

HR1A4M 数据手册

 浏览型号HR1A4M的Datasheet PDF文件第2页浏览型号HR1A4M的Datasheet PDF文件第3页 
SMD Type  
Transistors  
Digital Transistors  
HR1A4M  
Features  
Up to 2A High Current Drives Such As IC Outputs and  
Actuators Available  
On-chip Bias Resistor  
Low Power Consumption During Drive  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
Rating  
-60  
Unit  
V
-60  
V
VEBO  
-10  
V
Collector Current (DC)  
IC(DC)  
-1.0  
A
Collector Current (Pulse)  
Base Current (DC)  
IC(pulse) *1  
IB(DC)  
PT *2  
Tj  
-2.0  
A
-0.02  
2.0  
A
Total Power Dissipation  
Junction temperature  
Storage temperature  
W
150  
Tstg  
-55 to +150  
*1 PW 10ms, Duty Cycle 50%  
*2 When 0.7mm x 16cm2 ceramic board is used.  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
-100  
Unit  
nA  
Collector Cut-off Current  
VCB = -60V, IE = 0  
VCE = -2.0V , IC = -0.1A  
VCE = -2.0V , IC = -0.5A  
VCE = -2.0V , IC = -1.0A  
150  
100  
50  
DC Current Gain  
hFE *  
Low Level Output Voltage  
Low Level Input Voltage  
Input Resistance  
VOL * VIN = -5.0V, IC = -0.1A  
-0.2  
-0.3  
13  
V
V
k
VIL *  
R1  
VCE = -5.0V, IC = -100  
A
7
7
10  
10  
Emitter-Base Resistance  
* PW 350 s, Duty Cycle 2%  
R2  
13  
k
1
www.kexin.com.cn  

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