Datasheet > HR1A3M-AZ

HR1A3M-AZ

更新时间： 2024-11-21 21:07:23

品牌	Logo	应用领域
瑞萨 - RENESAS		开关晶体管
页数	文件大小	规格书
6页	120K
描述
1A, 60V, PNP, Si, POWER TRANSISTOR

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中文翻译

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技术参数
数据手册

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HR1A3M-AZ 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.31
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	1 A	集电极-发射极最大电压：	60 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	50
JESD-30 代码：	R-PSSO-F3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

HR1A3M-AZ 数据手册

DATA SHEET

COMPOUND TRANSISTOR

HR1 SERIES

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

Up to 2A high current drives such as IC outputs and actuators

available

•

On-chip bias resistor

Low power consumption during drive

HR1 SERIES LISTS

Products

HR1A3M

HR1F3P

HR1L3N

HR1A4,

Marking

R¹(KΩ)

1.0

R²(KΩ)

1.0

2.2

4.7

HR1L2Q

HR1F2Q

HR1A4A

0.47

0.22

−

4.7

2.2

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

I^B(DC)

P^T**

T^j

Ratings

−60

Unit

−60

−10

−1.0

−2.0

−0.02

2.0

Total power dissipation

Junction temperature

Storage temperature

°C

150

T^stg

−55 to +150

* PW ≤ 10 ms, duty cycle ≤ 50 %

** When 0.7 mm × 16 cm²ceramic board is used

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16184EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与HR1A3M-AZ相关器件

型号	品牌	获取价格	描述	数据表
HR1A3M-T1	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
HR1A3M-T1-AY	RENESAS	获取价格	暂无描述
HR1A4	NEC	获取价格	On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
HR1A470KC	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR
HR1A470KR	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR
HR1A470KT	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR
HR1A470LC	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR
HR1A470LR	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR
HR1A470LT	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR
HR1A470MC	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR