Datasheet > HR1A3M

HR1A3M

更新时间： 2024-11-21 10:55:31

品牌	Logo	应用领域
科信 - KEXIN		晶体数字晶体管开关
页数	文件大小	规格书
3页	169K
描述
Digital Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HR1A3M 数据手册

SMD Type

Transistors

Digital Transistors

HR1A3M

Features

Up to 2A High Current Drives Such As IC Outputs and

Actuators Available

On-chip Bias Resistor

Low Power Consumption During Drive

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

Rating

-60

Unit

-60

V^EBO

-10

Collector Current (DC)

I^C(DC)

-1.0

Collector Current (Pulse)

Base Current (DC)

I^C(pulse)*1

I^B(DC)

P^T*2

T^j

-2.0

-0.02

2.0

Total Power Dissipation

Junction temperature

Storage temperature

150

Tstg

-55 to +150

*1 PW 10ms, Duty Cycle 50%

*2 When 0.7mm x 16cm²ceramic board is used.

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

-100

Unit

Collector Cut-off Current

VCB = -60V, IE = 0

V^CE= -2.0V , IC = -0.1A

V^CE= -2.0V , IC = -0.5A

V^CE= -2.0V , IC = -1.0A

100

DC Current Gain

h^FE*

Low Level Output Voltage

Low Level Input Voltage

Input Resistance

V^OL* VIN = -5.0V, IC = -0.4A

-0.4

-0.3

1.3

V^IL*

V^CE= -5.0V, IC = -100

0.7

1.0

Emitter-Base Resistance

* PW 350 s, Duty Cycle 2%

1.3

www.kexin.com.cn

12 3

中文翻译

下载PDF

与HR1A3M相关器件

型号	品牌	获取价格	描述	数据表
HR1A3M-AZ	RENESAS	获取价格	1A, 60V, PNP, Si, POWER TRANSISTOR
HR1A3M-T1	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
HR1A3M-T1-AY	RENESAS	获取价格	暂无描述
HR1A4	NEC	获取价格	On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
HR1A470KC	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR
HR1A470KR	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR
HR1A470KT	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR
HR1A470LC	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR
HR1A470LR	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR
HR1A470LT	DBLECTRO	获取价格	ALUMINIUM ELECTROLYTIC CAPACITOR