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HN58C256AFP-85 PDF预览

HN58C256AFP-85

更新时间: 2024-09-27 22:33:35
品牌 Logo 应用领域
日立 - HITACHI 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
25页 126K
描述
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

HN58C256AFP-85 数据手册

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HN58C256A Series  
HN58C257A Series  
256k EEPROM (32-kword × 8-bit)  
Ready/Busy and RES function (HN58C257A)  
ADE-203-410D (Z)  
Rev. 4.0  
Oct. 24, 1997  
Description  
The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as  
32768-word × 8-bit. They have realized high speed low power consumption and high reliability by  
employing advanced MNOS memory technology and CMOS process and circuitry technology. They also  
have a 64-byte page programming function to make their write operations faster.  
Features  
Single 5 V supply: 5 V ±10%  
Access time: 85 ns/100 ns (max)  
Power dissipation  
Active: 20 mW/MHz, (typ)  
Standby: 110 µW (max)  
On-chip latches: address, data, CE, OE, WE  
Automatic byte write: 10 ms max  
Automatic page write (64 bytes): 10 ms max  
Ready/Busy (only the HN58C257A series)  
Data polling and Toggle bit  
Data protection circuit on power on/off  
Conforms to JEDEC byte-wide standard  
Reliable CMOS with MNOS cell technology  
105 erase/write cycles (in page mode)  
10 years data retention  
Software data protection  
Write protection by RES pin (only the HN58C257A series)  
Industrial versions (Temperatur range: – 20 to 85˚C and – 40 to 85˚C) are also available.  

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