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HN58C256AFPI-10E PDF预览

HN58C256AFPI-10E

更新时间: 2024-11-19 14:51:07
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
18页 1048K
描述
IC,EEPROM,32KX8,CMOS,SOP,28PIN,PLASTIC

HN58C256AFPI-10E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SOP, SOP28,.4
Reach Compliance Code:compliant风险等级:5.83
最长访问时间:100 ns命令用户界面:NO
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G28JESD-609代码:e3
内存密度:262144 bit内存集成电路类型:EEPROM CARD
内存宽度:8湿度敏感等级:1
端子数量:28字数:32768 words
字数代码:32000最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP28,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:5 V编程电压:2.7 V
认证状态:Not Qualified最大待机电流:0.00002 A
子类别:EEPROMs最大压摆率:0.03 mA
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
最长写入周期时间 (tWC):10 msBase Number Matches:1

HN58C256AFPI-10E 数据手册

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Data Sheet  
HN58C256AI Series  
256k EEPROM (32-kword × 8-bit)  
Description  
R10DS0218EJ0100  
Rev.1.00  
Oct 07, 2013  
Renesas Electronics' HN58C256AI are electrically erasable and programmable ROMs organized as 32768-word × 8-bit.  
They have realized high speed low power consumption and high reliability by employing advanced MNOS memory  
technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make  
their write operations faster.  
Features  
Single 5 V supply: 5 V 10%  
Access time: 85 ns/100 ns (max)  
Power dissipation  
Active: 20 mW/MHz, (typ)  
Standby: 110 μW (max)  
On-chip latches: address, data, CE, OE, WE  
Automatic byte write: 10 ms max  
Automatic page write (64 bytes): 10 ms max  
Data polling and Toggle bit  
Data protection circuit on power on/off  
Conforms to JEDEC byte-wide standard  
Reliable CMOS with MNOS cell technology  
105 erase/write cycles (in page mode)  
10 years data retention  
Software data protection  
There are lead free products  
R10DS0218EJ0100 Rev.1.00  
Oct 07, 2013  
Page 1 of 16  

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