Datasheet > HN1B04FU-GR,LF(T

HN1B04FU-GR,LF(T

更新时间： 2024-11-12 15:34:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	387K
描述
Small Signal Bipolar Transistor

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中文翻译

获取价格

技术参数
数据手册

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HN1B04FU-GR,LF(T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

HN1B04FU-GR,LF(T 数据手册

HN1B04FU

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

HN1B04FU

Audio Frequency General Purpose Amplifier Applications

Unit: mm

Q1:

z High voltage and high current

: V_CEO= 50V, I_C= 150mA (max)

z High h_FE: h_FE= 120 to 400

z Excellent h_FElinearity

: h_FE(I_C= 0.1mA) / h_FE(I_C= 2mA) = 0.95 (typ.)

Q2:

z High voltage and high current

: V_CEO= −50V, I_C= −150mA (max)

z High h_FE: h_FE= 120 to 400

z Excellent h_FElinearity

: h_FE(I_C= −0.1mA) / h_FE(I_C= −2mA) = 0.95 (typ.)

JEDEC

―

JEITA

TOSHIBA

2-2J1A

Weight: 6.8mg (typ.)

Q1 Absolute Maximum Ratings (Ta = 25°C)

Marking

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

150

Base current

Start of commercial production

1992-10

2014-03-01

12 3 4 5 6

中文翻译

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