Datasheet > HN1C01FUGR

HN1C01FUGR

更新时间： 2024-11-11 23:56:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	138K
描述
TRANSISTOR \| BJT \| PAIR \| NPN \| 50V V(BR)CEO \| 150MA I(C) \| TSOP

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中文翻译

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数据手册

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HN1C01FUGR 数据手册

HN1C01FU

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

HN1C01FU

Audio Frequency General Purpose Amplifier Applications

Unit: mm

l Small package (Dual type)

l High voltage and high current

: V_CEO= 50V, I_C= 150mA (max)

l High h_FE: h_FE= 120~400

l Excellent h_FElinearity

: h_FE(I_C= 0.1mA) / h_FE(I_C= 2mA) = 0.95 (typ.)

Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

150

°C

Base current

JEDEC

EIAJ

―

Collector power dissipation

Junction temperature

Storage temperature range

P *

200

125

−55~125

TOSHIBA

Weight: 6.8mg

2-2J1A

stg

Total rating

Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)

Test

Characteristic

Symbol

Test Condition

= 60V, I = 0

Min

Typ.

Max

Unit

Circuit

―

Collector cut-off current

Emitter cut-off current

DC current gain

―

0.1

400

µA

CBO

―

= 5V, I = 0

EBO

―

= 6V, I = 2mA

120

FE (Note)

Collector-emitter

saturation voltage

= 100mA, I = 10mA

―

0.1

0.25

CE (sat)

Transition frequency

―

= 10V, I = 1mA

―

MHz

Collector output capacitance

Note: h_FEClassification

= 10V, I = 0, f = 1MHz

―

3.5

Y (Y): 120~240, GR (G): 200~400

(

) Marking Symbol

2001-06-07

12 3 4

中文翻译

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