Datasheet > HN1C01F-GRTE85LF

HN1C01F-GRTE85LF

更新时间： 2024-11-12 12:36:03

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
4页	249K
描述
Audio-Frequency General-Purpose Amplifier Applications

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中文翻译

获取价格

数据手册

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HN1C01F-GRTE85LF 数据手册

HN1C01F

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

HN1C01F

Audio-Frequency General-Purpose Amplifier Applications

Unit: mm

z Small package (dual type)

z High voltage and high current

: V_CEO= 50 V, I_C= 150 mA (max)

z High h_FE: h_FE= 120~400

z Excellent h_FElinearity

: h_FE(I_C= 0.1 mA) / h_FE(I_C= 2 mA) = 0.95 (typ.)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

150

°C

JEDEC

―

Base current

JEITA

TOSHIBA

2-3N1A

Collector power dissipation

Junction temperature

Storage temperature range

P *

300

125

−55~125

Weight: 0.015 g (typ.)

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)

Test

Circuit

Characteristic

Symbol

Test Condition

= 60 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

DC current gain

―

0.1

400

μA

CBO

―

= 5 V, I = 0

EBO

―

= 6 V, I = 2 mA

120

FE (Note)

Collector-emitter

saturation voltage

―

= 100 mA, I = 10 mA

―

0.1

0.25

CE (sat)

Transition frequency

―

= 10 V, I = 1 mA

―

MHz

Collector output capacitance

Note: h_FEClassification

= 10 V, I = 0, f = 1 MHz

―

3.5

Y (Y): 120~240, GR (G): 200~400

) Marking symbol

(

2007-11-01

12 3 4

中文翻译

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与HN1C01F-GRTE85LF相关器件

型号	品牌	获取价格	描述	数据表
HN1C01FGRTE85N	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
HN1C01FGRTE85R	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
HN1C01FTE85L	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
HN1C01FTE85N	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
HN1C01FU	TOSHIBA	获取价格	NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
HN1C01FU_07	TOSHIBA	获取价格	Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applica
HN1C01FUGR	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 50V V(BR)CEO \| 150MA I(C) \| TSOP
HN1C01FU-GR	TOSHIBA	获取价格	Audio-Frequency General-Purpose Amplifier Applications
HN1C01FU-GR(5LMA,F	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
HN1C01FU-GR(T5L,F)	TOSHIBA	获取价格	Trans GP BJT NPN 50V 0.15A 6-Pin US T/R

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