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HN1C01FE-Y(5LMAA,F PDF预览

HN1C01FE-Y(5LMAA,F

更新时间： 2024-11-12 14:51:07
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
3页 210K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

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HN1C01FE-Y(5LMAA,F 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code：unknown风险等级：5.72
最大集电极电流 (IC)：0.15 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE)：120
JESD-30 代码：R-PDSO-F6元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：80 MHzBase Number Matches：1

HN1C01FE-Y(5LMAA,F 数据手册

 浏览型号HN1C01FE-Y(5LMAA,F的Datasheet PDF文件第2页浏览型号HN1C01FE-Y(5LMAA,F的Datasheet PDF文件第3页 
HN1C01FE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
HN1C01FE  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
z Small package (Dual type)  
z High voltage and high current  
: VCEO = 50V, IC = 150mA (max)  
z High hFE : hFE = 120 to 400  
z Excellent hFE linearity  
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Rating  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
60  
50  
V
5
V
I
150  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
30  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
100  
T
j
150  
T
stg  
−55 to 150  
JEDEC  
―
―
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
JEITA  
TOSHIBA  
Weight: 3.0mg(typ.)  
2-2N1G  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*Total rating  
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 60V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
I
―
V
V
V
―
―
―
―
―
0.1  
0.1  
400  
μA  
μA  
CBO  
CB  
EB  
CE  
E
I
―
―
= 5V, I = 0  
C
EBO  
h
= 6V, I = 2mA  
120  
FE (Note)  
C
Collector-emitter  
saturation voltage  
V
―
I
= 100mA, I = 10mA  
―
0.1  
0.25  
V
CE (sat)  
C
B
Transition frequency  
f
―
―
V
V
= 10V, I = 1mA  
80  
―
―
―
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= 10V, I = 0, f = 1MHz  
―
2
ob  
E
Note:hFE Classification Y (Y): 120 to 240, GR (G): 200 to 400  
( ) Marking Symbol  
Marking  
Equivalent Circuit (Top View)  
Type Name  
Rank  
6
5
2
4
h
6
1
5
4
3
FE  
Q2  
Q1  
C1  
1
3
Start of commercial production  
2
2000-05  
2014-03-01  
1
123

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