Datasheet > HMS8N50I

HMS8N50I

更新时间： 2024-09-16 01:22:47

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
7页	935K
描述
500V N-Channel MOSFET

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中文翻译

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HMS8N50I 数据手册

HMS8N50K/HMS8N50I

500V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using H&M Semi’s

Advanced Super-Junction technology.

This advanced technology has been especially tailored

to minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- 7.6A, 500V, R_{DS(on) typ.}= 0.5Ω@V_GS= 10 V

- Low gate charge ( typical 25nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

These devices are well suited for AC/DC power conversion

in switching mode operation for higher efficiency.

I-PAK

D-PAK

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

HMS8N50K/HMS8N50I

Units

Drain-Source Voltage

500

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

7.6*

I_D

I_DM

(Note 1)

Drain Current

V_GSS

Gate-Source Voltage

±30

(Note 2)

(Note 1)

(Note 3)

EAS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

1.7

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

V/ns

dv/dt

4.5

P_D

- Derate above 25℃

0.45

-55 to +150

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

T_L

300

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

HMS8N50K/HMS8N50I

Units

Thermal Resistance, Junction-to-Case

2.2

℃/W

R_θJC

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.5

℃/W

R_θJS

R_θJA

12 3 4 5 6 7

中文翻译

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