Datasheet > HMS8N60

HMS8N60

更新时间： 2022-06-24 15:43:27

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
9页	981K
描述
N-Channel Super Junction Power MOSFET â¡

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HMS8N60 数据手册

HMS8N60D, HMS8N60, HMS8N60F

N-Channel Super Junction Power MOSFET Ⅱ

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS@T_jmax

R_{DS(ON) MAX}

I_D

650

540

Ω

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

Schematic diagram

● Uninterruptible Power Supply（UPS）

Package Marking And Ordering Information

Device

HMS8N60D

HMS8N60

HMS8N60F

Device Package

Marking

TO-263

HMS8N60D

HMS8N60

HMS8N60F

TO-220

TO-220F

TO-263

TO-220

TO-220F

Table 1. Absolute Maximum Ratings (T_C=25

℃

)

HMS8N60D

HMS8N60

Parameter

Symbol

HMS8N60F

Unit

600

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V)

±30

Continuous Drain Current at Tc=25°C

5.2

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

5.2*

24*

(Note 1)

Pulsed drain current

31.7

0.25

Maximum Power Dissipation(Tc=25℃)

Derate above 25°C

0.64

W/°C

(Note 2)

185

EAS

Single pulse avalanche energy

Avalanche current^{(Note 1)}

I_AR

Repetitive Avalanche energy ，t_ARlimited by T_jmax

(Note 1)

0.4

E_AR

v1.0

Page 1

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

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