Datasheet > 存储 > DRAM> HMP112F7EFR8C-Y5

HMP112F7EFR8C-Y5

更新时间： 2024-11-04 05:36:19

品牌	Logo	应用领域
海力士 - HYNIX		存储内存集成电路动态存储器双倍数据速率
页数	文件大小	规格书
32页	1065K
描述
240pin Fully Buffered DDR2 SDRAM DIMMs

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中文翻译

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技术参数
数据手册

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HMP112F7EFR8C-Y5 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DIMM	包装说明：	DIMM,
针数：	240	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.32
风险等级：	5.84	Is Samacsys：	N
访问模式：	SINGLE BANK PAGE BURST	其他特性：	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
JESD-30 代码：	R-XDMA-N240	长度：	133.35 mm
内存密度：	1073741824 bit	内存集成电路类型：	DDR DRAM MODULE
内存宽度：	8	功能数量：	1
端口数量：	1	端子数量：	240
字数：	134217728 words	字数代码：	128000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：		组织：	128MX8
封装主体材料：	UNSPECIFIED	封装代码：	DIMM
封装形状：	RECTANGULAR	封装形式：	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	30.35 mm	自我刷新：	YES
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	NO
技术：	CMOS	温度等级：	OTHER
端子形式：	NO LEAD	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	8.2 mm
Base Number Matches：	1

HMP112F7EFR8C-Y5 数据手册

240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb E-ver.

This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow

host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

isolates the DDR2 SDRAMs from the channel. This single component located in the front side center of

each DIMM, acts as a repeater and buffer for all signals and commands which are exchanged between the

host controller and the DDR2 SDRAMs including data in and output. The AMB communicates with the host

controller and adjacent DIMMs on a system board using an industry standard Differential Point to Point

Link Interface at 1.5V power.

The AMB also allows buffering of memory traffic to support large memory capacities. All memory control

for the DDR2 SDRAM devices resides in the host, including memory request initiation, timing, refresh,

scrubbing, sparing, configuration access and power management. The AMB interface is responsible for

handling channel and memory requests to and from the local FBDIMM and for forwarding request to other

FBDIMMs on the memory channel.

FEATURES

•

240 pin Fully Buffered ECC Dual-In-Line DDR2 SDRAM Module

JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply

All inputs and outputs are compatible with SSTL_1.8 interface

Built with 1Gb DDR2 SDRAMs in 60ball FBGA

Host interface and AMB component industry standard compliant

MBIST, IBIST test functions

8 Bank architecture

OCD (Off-Chip Driver Impedance Adjustment)

ODT (On-Die Termination)

Fully differential clock operations (CK & CK)

Programmable Burst Length 4 / 8 with both sequential and interleave mode

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

Serial presence detect with EEPROM

133.35 x 30.35 mm form factor

RoHS compliant

Full DIMM Heat Spreader

This document is a general product description and is subject to change without notice. Hynix Electronics does not

assume any responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.2 / Sep. 2008

12 3 4 5 6 7...32

中文翻译

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与HMP112F7EFR8C-Y5相关器件

型号	品牌	获取价格	描述	数据表
HMP112F7EFR8C-Y5D5	HYNIX	获取价格	Memory IC, 128MX72, CMOS, PDMA240
HMP112F7EFR8C-Y5N3	HYNIX	获取价格	240pin Fully Buffered DDR2 SDRAM DIMMs
HMP112P7EFR4C-S5	HYNIX	获取价格	DDR DRAM Module, 128MX8, 0.4ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, DIMM-240
HMP112P7EFR4C-Y5	HYNIX	获取价格	DDR DRAM Module, 128MX8, 0.4ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, DIMM-240
HMP112P7EFR8C-C4	HYNIX	获取价格	240pin Registered DDR2 SDRAM DIMMs
HMP112P7EFR8C-C4_1	HYNIX	获取价格	240pin Registered DDR2 SDRAM DIMMs
HMP112P7EFR8C-S5	HYNIX	获取价格	240pin Registered DDR2 SDRAM DIMMs
HMP112P7EFR8C-S6	HYNIX	获取价格	240pin Registered DDR2 SDRAM DIMMs
HMP112P7EFR8C-Y5	HYNIX	获取价格	240pin Registered DDR2 SDRAM DIMMs
HMP112S6EFR6C-C4	HYNIX	获取价格	200pin Unbuffered DDR2 SDRAM SO-DIMMs

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