Datasheet > 存储 > 其他内存集成电路> HMN1M8DN-120I

HMN1M8DN-120I

更新时间： 2024-11-12 03:11:27

品牌	Logo	应用领域
HANBIT		存储内存集成电路静态存储器
页数	文件大小	规格书
9页	169K
描述
Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V

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技术参数
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HMN1M8DN-120I 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

HMN1M8DN-120I 数据手册

HANBit

HMN1M8DN

Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V

Part No. HMN1M8DN

GENERAL DESCRIPTION

The HMN1M8DN Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits.

The HMN1M8DN has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write

cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-

tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the

memory until after V_CCreturns valid and write protection is unconditionally enabled to prevent garbled data. In addition the

SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is

switched on to sustain the memory until after V_CCreturns valid.

The HMN1M8DN uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-

volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES

PIN ASSIGNMENT

w Access time : 70, 85, 120, 150ns

w High-density design : 8Mbit Design

w Battery internally isolated until power is applied

w Industry-standard 40-pin 1,024K x 8 pinout

w Unlimited write cycles

V^CC

A₁₉

A¹⁸

A₁₆

A¹⁴

A¹²

A₁₅

A¹⁷

/WE

A¹³

A⁸

A⁹

A¹¹

/OE

A₁₀

/CE

DQ⁷

DQ⁶

DQ₅

DQ₄

DQ₃

w Data retention in the absence of V_CC

w 10-years minimum data retention in absence of power

w Automatic write-protection during power-up/power-down

cycles

A⁷

A⁶

A⁵

A⁴

A³

A₂

w Data is automatically protected during power loss

A₁

A⁰

DQ⁰

DQ¹

DQ₂

V_SS

OPTIONS

w Timing

70 ns

MARKING

40-pin Encapsulated Package

- 70

- 85

-120

-150

85 ns

120 ns

150 ns

URL : www.hbe.co.kr

HANBit Electronics Co.,Ltd.

REV. 0.2 (August, 2002)

12 3 4 5 6 7...9

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与HMN1M8DN-120I相关器件

型号	品牌	获取价格	描述	数据表
HMN1M8DN-150	HANBIT	获取价格	Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V
HMN1M8DN-150I	HANBIT	获取价格	Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V
HMN1M8DN-70	HANBIT	获取价格	Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V
HMN1M8DN-70I	HANBIT	获取价格	Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V
HMN1M8DN-85	HANBIT	获取价格	Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V
HMN1M8DN-85I	HANBIT	获取价格	Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V
HMN1M8DV	HANBIT	获取价格	Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V
HMN1M8DV-120I	HANBIT	获取价格	Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V
HMN1M8DV-150	HANBIT	获取价格	Memory IC
HMN1M8DV-150I	HANBIT	获取价格	Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V

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